EPC2121: 100 V, 2.5 A Bidirectional GaN Power Transistor

VDS, 100 V
Typical RDD, 50 mΩ
ID, 2.5 A
Pulsed ID, 18 A

EPC2121 100 V, 2.5 A Bidirectional Enhancement-Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm

Applications

  • Solid-state relays
  • AC switching
  • Battery management

Benefits

  • Bidirectional blocking
  • Ultra small footprint
  • Low on-resistance
Status: Preferred

Buy Now
Qty Unit Price(USD)

In Stock

View Cart
Find Distributor
Ask an EPC GaN Engineer a Question