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Chapter 1: GaN Technology and Devices
Since publication, the following new development related to chapter 1 could be of interest:
- Section 1.4: Device Technology and the State of the Art. At publication EPC was shipping Generation 5 devices in volume. Since publication, the introduction of the next generation has been introduced that offers superior performance in half the size. The first device in this new family is EPC2619, 80 V, 4.2 mΩ (max), 164 A(Pulsed), 3.75 mm2.
Use our interactive parametric selection tool to identify the best possible eGaN® solution for your system. To receive email notification of new product releases, subscribe to our newsletter
Chapter 2: GaN Basics
Since publication, the following new developments related to chapter 2 could be of interest:
- GaN FET Thermal Calculator : The EPC Thermal Calculator provides quick estimates for the thermal performance parameters of PCB-mounted GaN devices subject to both board-side cooling through forced convection, and backside cooling through a thermal solution consisting of a heat spreader and heatsink.
- Cross Reference Search : Easily compare parametric differences without opening a single datasheet to identify the eGaN FET to increase your design efficiency. Simply enter a competitor's part number to find a suggested replacement.
Chapter 3: GaN Reliability and Lifetime Projections
eGaN® devices have been in volume production since March 2010 and have demonstrated very high reliability in both laboratory testing and high-volume customer applications with a remarkable field reliability record. Click here to access reliability reports Phase 1 – Phase 14.
Chapter 4: GaN for DC-DC Conversion
Since publication, the following new developments related to chapter 4 could be of interest:
Recently released reference designs:
- EPC9157: 300 W 1/16th Brick
- EPC9174: 40 – 60 VIN, 10 – 15 V, 100 A Output, 1.2 kW 1/8th Brick
- EPC9163: 2 kW, 48 V/12 V Bi-directional Power Module
- EPC9165: 2 kW, 48 V/14 V Bi-directional Power Module
- EPC9170: 2 kW, 48 V/14 V Bi-directional Power Module with ePower™ Chipset
- EPC9166: 12 VIN, 48 V /500 Output Dual Phase Synchronous Boost Converter
- EPC9160: 9 V – 24 V to Dual Output 5 V/3.3 V Synchronous Buck Converter
- EPC9162: 50 W Boost/ 60 W Buck Bi-Directional Power Module
Chapter 5: GaN in Lidar
Thank you for your interest in GaN for lidar applications. Between updates a technical forum is a place for GaN technology enthusiast to ask questions and share ideas; Visit the forum or submit a question to the team of GaN Experts.
Chapter 6: GaN Devices for Motor Drive Applications
Since publication, the following new developments related to chapter 6 could be of interest:
Recently released reference designs:
Chapter 7: GaN in Space
Since publication, the following new developments related to chapter 7 could be of interest:
EPC has released a family of radiation-hardened (rad-hard) gallium nitride products for power conversion solutions in critical spaceborne and other high reliability environments. Ranging from 40 V – 200 V, the EPC7xxx family of products address applications such as power supplies for satellites and mission equipment, lidar for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles.
Packaged versions of this family of devices will be available from EPC Space.
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Chapter 8: From Discretes to ICs
Since publication, the following new developments related to chapter 7 could be of interest:
EPC announced the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower™ Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.
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