Andover, MA – July 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the EPC7C021, a high-performance, three-phase motor demonstration board featuring the radiation-hardened EPC7011L7C eGaN® IC. Designed for ease of evaluation and system integration, the EPC7C021 delivers a user friendly, flexible platform for developing motor drive applications such as reaction and momentum wheels, ion thrusters, robotics and other automation in demanding radiation environments.

Measuring just 6.50” x 5.22”, the EPC7C021 is a full-featured evaluation board that can operate as a stand-alone three-phase motor driver or be paired with the EPC9147A controller daughtercard for closed-loop motor control. The board includes dead-time generation circuitry, current and voltage monitoring, and optional filtering for sine wave approximation—making it ideal for engineers looking to evaluate GaN performance in space- and radiation-critical applications.

GaN FETs are revolutionizing power electronics - faster, smaller, and CHEAPER than silicon MOSFETs. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains why GaN technology is now powering AI servers, satellites, and robotics. Learn how wide band gap semiconductors achieve 10x better performance than silicon, why GaN is actually less expensive at 100-200V, and how the new Gen 7 devices are 3x smaller than previous generations.

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GaN (Gallium Nitride) FETs are revolutionizing power electronics with superior reliability compared to traditional silicon semiconductors. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains the fundamental advantages of GaN technology for power conversion applications. Learn why GaN devices can operate at 300°C while silicon fails, understand the absence of the Spirito effect in GaN FETs, and discover how these wide bandgap semiconductors achieve radiation immunity for space applications.

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EPC91118 Reference Design Combines Power, Sensing, and Control in an Ultra-Compact Format for Robot Joints and UAVs.

EL SEGUNDO, Calif.— July 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices introduces the EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A_RMS per phase from a 15 V to 55 V DC input in an ultra-compact circular form factor.

As GaN (gallium nitride) technology continues to mature, its applications are expanding into lower voltage domains—traditionally dominated by silicon MOSFETs. In this insightful article, discover how GaN’s superior efficiency, reduced switching losses, and compact form factor are transforming power conversion in consumer electronics, automotive systems, and edge computing and ushering in a new era of innovation in low voltage power design.

Components in Electronics
June 2025
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In this op-ed, Alfred Vollmer explores the accelerating shift from traditional silicon MOSFETs to wide bandgap (WBG) semiconductors—particularly gallium nitride (GaN) and silicon carbide (SiC). GaN devices are conquering more and more terrain that was formerly a pure domain of Silicon MOSFETs.

Bodo’s Power Systems
June 2025
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Andover, MA – June 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.

As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.

Compact 180 W GaN buck converter with no heatsink needed—ideal for USB PD, laptops, and portable power applications.

EL SEGUNDO, Calif.— June 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announces the release of the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems.

Modern power systems demand higher efficiency, increased power density, and reduced electromagnetic interference (EMI)—all while adhering to shrinking size constraints. Among the converter topologies addressing these challenges, the Flying Capacitor Multilevel (FCML) converter stands out for its unique advantages. When combined with Gallium Nitride (GaN) power transistors, FCML converters offer an unprecedented level of performance, particularly in the realm of medium-voltage applications such as 48 V data center power delivery, battery management systems, and high-efficiency power factor correction (PFC) circuits.

Power Systems Design
June 2025
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The EPC9196 is a 25 A_RMS, 3-Phase BLDC Motor Drive Inverter optimized for 96–150 V Battery Applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announces the release of the EPC9196, a high-performance 25 A_RMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics.

In part one of this series, we gave a brief introduction to the multi-level totem-pole PFC topology and how it can improve power density in server applications. In this second part we dive deeper into the design details of such a solution and present experimental results for a 240 VAC input to 400 VDC output, 5 kW PFC system.

Bodo’s Power Systems
May 2025
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The next-generation GaN platform is driving a significant leap in high-density DC-DC converter technology, offering unprecedented performance improvements over traditional silicon-based solutions. In this presentation, Alex Lidow explores the evolution of 100 V and 40 V GaN devices, showcasing their role in 48V-to-12V power conversion. This session highlights how GaN technology is revolutionizing power conversion, providing the foundation for smaller, more efficient, and lower-cost solutions in high-performance applications.

PCIM Technology Stage
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El Segundo, CA — May 2025 – Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and synchronous rectifiers.

With industry-leading R_DS(on) x Q_G figure of merit (10 mΩ·nC), zero reverse recovery, and excellent thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density in a compact 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.

EL SEGUNDO, Calif. — April 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, will exhibit its latest advancements in high-performance GaN technology at PCIM Europe 2025, taking place 6–8 May in Nuremberg, Germany.

Visit EPC in Hall 9, Stand 318 to see a wide array of GaN-based power solutions powering next-generation applications—from high-density computing to motor drives for humanoid robots, automotive electrification, and satellites. Live demonstrations will highlight EPC’s latest GaN FETs and ICs in real-world applications that emphasize smaller size, higher efficiency, and lower cost compared to silicon solutions.

This article explores the value of high-frequency motor drives, their advantages and the capabilities of GaN technology, which make them suitable for today’s demanding applications.

Electronics Weekly
May, 2025
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EL SEGUNDO, Calif.— April 2025 — Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, introduces the EPC91116, a high-speed, high-current laser driver evaluation board tailored for indirect time-of-flight (iToF) applications in automotive and industrial sensing. Built around the AEC-Q101 qualified EPC2203 eGaN^® FET, the EPC91116 delivers nanosecond-scale performance with a flexible, low-cost architecture that simplifies prototyping and accelerates time to market.

As iToF systems become critical for automotive driver monitoring, in-cabin sensing, and 3D mapping, designers need tools that are ready for qualification and production. The EPC91116 answers this need with support for peak currents above 10 A, pulse widths as narrow as 5 ns, and switching speeds up to 100 MHz.

This month’s How2Power newsletter covers EPC’s participation at APEC 2025. At the show, EPC showcased a life-sized server display and cutting-edge GaN-based power converters, including a 48 V to 12 V LLC reference design delivering over 95.5% efficiency and >5 kW/in³ power density. CEO Alex Lidow also revealed a compact 5 kW AC-DC power supply that exceeds 100 W/in³, highlighting GaN’s impact on server power architectures. On the robotics front, EPC’s humanoid ambassador “Greg” and a miniaturized GaN inverter for motor joints illustrated why GaN is quickly becoming essential in the world of intelligent machines.

How2Power
April, 2025
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El Segundo, CA – March 2025 – EPC is pleased to announce that the United States Patent Office, in a decision issued in IPR2023-01381, has strengthened the ’294 patent by adding two new patent claims that are fundamental to commercial enhancement-mode GaN devices. While the USPTO also cancelled two claims that were the basis for the ITC’s infringement decision against Innoscience, EPC will appeal the USPTO’s cancellation of its claims. Historically, EPC’s patents have been upheld in multiple jurisdictions, including both the U.S. and China, reinforcing EPC’s expectation that the final outcome will ultimately be in its favor.

El Segundo, CA — March 2025 – Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, introduces the EPC2367, a next-generation 100 V eGaN® FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.

EL SEGUNDO, Calif. — February 2025 — EPC, the leader in gallium nitride (GaN) power devices, announces the release of its Phase 17 Reliability Report, further solidifying GaN’s position as a highly reliable technology for power electronics, automotive, AI, space, and industrial applications.

The latest reliability report introduces expanded lifetime models, mission-specific reliability projections, and new physics-based wear-out mechanisms, providing engineers with more accurate and practical reliability data for GaN power devices.