EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz.

EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz.

Award Recognizes Innovation in Power Device Technology for Enabling the Commercialization of GaN

EL SEGUNDO, Calif, — January 2016 — Today, Efficient Power Conversion (EPC) announced that its CEO Alex Lidow was selected as the recipient of the 2015 SEMI Award for North America for the innovation of power device technology, enabling the commercialization of GaN. Dr. Lidow is being honored for his work in the area of Process and Technology Integration.

Dr. Zhang will be creating benchmark envelope tracking designs and assisting customers in the use of eGaN^® FETs for high frequency, high- performance power conversion systems.

EL SEGUNDO, Calif.—January 2016 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. Yuanzhe Zhang has joined the EPC engineering team as Director, Applications Engineering.

Recognized as an EDN Magazine Hot 100 Product for 2015, EPC2035/36 low-priced gallium nitride FETs give better performance, smaller size, and lower cost than an equivalent silicon solution. This is the third time in 5 years that EPC’s eGaN technology has been recognized as a HOT 100.

EL SEGUNDO, Calif. — December 2015 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces that its EPC2035 (60 V) and EPC2036 (100 V) high frequency, low-priced eGaN FETs have been recognized with inclusion in the EDN list of 100 Hot Products for 2015.

The Second Edition of the Wireless Power Handbook is an updated and expanded guide to designing efficient amplifiers for a wireless power transfer systems taking advantage of the superior performance of gallium nitride power transistors.

EL SEGUNDO, Calif. – December 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of the Second Edition of the Wireless Power Handbook. This edition is a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride transistors.

Mr. Cataldo to direct EPC’s global sales and marketing organization and assist customers in adopting eGaN^® FETs and Integrated Circuits for leading-edge power conversion systems

EL SEGUNDO, Calif.—December 2015 — To support its accelerating growth, Efficient Power Conversion Corporation (EPC) is proud to announce that Nick Cataldo has joined the EPC leadership team as senior vice president of global sales and marketing. Mr. Cataldo has over 35 years of marketing and sales operation experience within the semiconductor industry. His primary responsibilities at EPC are creating and implementing sales and marketing strategies to achieve the company’s global sales objectives.

100 volt, 1 amp, 550 milliohm EPC2037 enhancement-mode gallium nitride power transistor is driven directly from a digital drive and delivers high frequency switching for exceptional performance in wireless charging Class-D and Class-E amplifier applications.

EL SEGUNDO, Calif. – October 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2037 as the newest member of EPC’s family of enhancement-mode gallium nitride power transistors (eGaN^® FETs).

EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors.

EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for more and faster access to information is showing no signs of slowing…and this is the challenge that motivated the writing of this practical engineering handbook – DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion.

120 volt, 60 milliohm EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.

EL SEGUNDO, Calif. – September 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits.

EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio.

EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN^® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

eGaN^®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

Integrated Device Technology, Inc. (IDT^®) (NASDAQ: IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN^® technology with leading IDT solutions.

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New eGaN^® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET.

EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve.

With the new 100 V EPC2104 eGaN^®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.

EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

New EPC2029 eGaN^® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology.

EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The power stage is a conventional hard-switched 300 kHz isolated buck converter.

Wireless Power Handbook is a guide to designing an efficient amplifier for a wireless power transfer system, taking advantage of the superior performance of gallium nitride power transistors.

EL SEGUNDO, Calif. – March 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride-based transistors. As a supplement to EPC’s GaN Transistors for Efficient Power Conversion, this new practical guide provides step-by-step analysis on the use of GaN transistors in wireless power transfer. /p> Read more

At the IEEE APEC 2015 power electronics industry conference, EPC applications experts will make eight technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs.

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.