Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimized or eliminated in an eGaN FET-based system.

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available.

EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations.

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications.

EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The EPC9107 demonstration board is 3” square and contains a fully closed-loop buck converter with optimized control loop. The complete power stage including eGaN FETs, driver, inductor and input/output caps is in an ultra compact 0.5” x 0.5” layout to showcase the performance that can be achieved using the eGaN FETs with the LM5113 eGaN driver.

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET

EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @ http://bit.ly/qr28tu

EPC9004 features eGaN^® FETs in combination with dedicated GaN FET gate driver from Texas Instruments

EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

Wireless charging will be a fast-growing segment of the power electronics industry in 2013. Significant developments began accelerating last year. The “Top 10” developments selected by the PowerPulse editors highlight important trends in wireless charging that will continue in 2013 and beyond.

EPC announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN® FETs from EPC are well suited for these systems because of their ability to operate efficiently at high frequency, voltage, and power. This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

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Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors

EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide.

“It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

Tech writer Ashok Bindra discusses the latest advances in silicon carbide, gallium nitride, and silicon devices for power electronics applications in a new monthly column sponsored by Cree, Inc. and Efficient Power Conversion Corp.

http://www.prweb.com/releases/2012/10/prweb10039506.htm

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

“It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, ‘an emerging company worthy of tracking,’” commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

Efficient Power Conversion Corporation (EPC) Market Leading eGaN^® FET Receives Top 10 Power Products Award from Electronic Products China

EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer.

EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion Corporation (EPC) today announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power.

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering.

As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride transistors. His initial focus will be on their use in higher voltage DC-DC converters and resonant, soft-switching converters. Dr. Reusch’s research and experience in these applications will be shared with customers to accelerate their designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs.

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy savings in communication devices.

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

"It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, 'an emerging company worthy of tracking,'" commented Alex Lidow, CEO, Efficient Power Conversion Corporation.