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Look Out Silicon Valley, Here Comes Gallium Beach

Look Out Silicon Valley, Here Comes Gallium Beach

Alex Lidow is a man on a mission. His Southern California company, Efficient Power Conversion or EPC, is using Gallium Nitride (GaN) chips instead of silicon for exciting applications, from wireless power charging and 4G LTE to augmented reality and autonomous vehicles.

But can this hot new technology ultimately displace the ubiquitous silicon chip in a $300 billion semiconductor market?

Fox Business
By Steve Tobak
March 18, 2016
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The Quest for Server Power Efficiency

The Quest for Server Power Efficiency

Glamour items like energy harvesting and wireless power transfer are likely to make "guest appearances" at next week's APEC Conference. GaN transistor deployments will be carefully monitored. But on-going efforts to promote data-center energy transfer efficiency retain their "bread-and-butter" utility.

EE Times
By: Stephan Ohr, Consultant, Semiconductor Industry Analyst
March 16, 2016
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How This Entrepreneur Rose From the Ashes to Challenge Silicon Valley

How This Entrepreneur Rose From the Ashes to Challenge Silicon Valley

After getting his PhD in applied physics at Stanford, Alex Lidow spent 30 years at International Rectifier (IR), a publicly traded chip company founded by his father Eric Lidow back in the 1940s.

Alex pioneered IR’s power management technology, co-authored the core-patents on which its business was built, became co-CEO with his brother, Derek, in 1995, and ran the company solo after Derek left to found market research firm iSupply in 1999.

Entrepreneur
By: Steve Tobak
March, 2016
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Efficient Power Conversion (EPC) Publishes Reliability Report Documenting Over 17 Billion Field-Device Hours with Very Low Failure Rate

Efficient Power Conversion (EPC) Publishes Reliability Report Documenting Over 17 Billion Field-Device Hours with Very Low Failure Rate

EPC Phase Seven Reliability Report shows that eGaN® FETs have solid reliability and are dependable replacement solutions to traditional silicon devices.

EL SEGUNDO, Calif.— March 2016 — EPC announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress. The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports a composite 0.24 FIT rate for products in the field, which is consistent with all of EPC’s in situ evaluations to date and validates the readiness of eGaN FETs to supplant their aging silicon cousins for commercial power switching applications.

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Rethinking Server Power Architecture in a Post-Silicon World

Rethinking Server Power Architecture in a Post-Silicon World

The demand for information in our society is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the Internet of Things, this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data.

EEWeb
Alex Lidow, Ph.D., David Reusch, Ph.D., and John Glaser, Ph.D.
March, 2016
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eGaN Technology Reliability and Physics of Failure

eGaN Technology Reliability and Physics of Failure

In this series we will look at the various ways the reliability of eGaN® technology has been validated, and how we are developing models from our understanding of the physics of failures that can help predict failure rates under almost any operating condition. In this first installment and the next, we will look at the field experience from the past six years of GaN transistors use in a variety of applications from vehicle headlamps to medical systems to 4G/LTE telecom systems. Diving into the failure of each and every part leads to some valuable lessons learned.

Planet Analog
Chris Jakubiec, Robert Strittmatter, Ph.D., and Alex Lidow, Ph.D.
March 1, 2016
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EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC will exhibit more than 20 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver six technical presentations on GaN FET technology at APEC® 2016, the premier global event in applied power electronics

EL SEGUNDO, Calif. — March, 2016 — The EPC team will be presenting six technical presentations on gallium nitride (GaN) technology and applications at APEC 2016 in Long Beach, California from March 20th through the 24th. In addition, the company will feature its latest eGaN® FETs and IC’s as well as their customers’ end products that are enabled by eGaN technology. Demonstrations will include wireless power systems that span the full power range of Qi and AirFuel standards and a multi-mode solution, a single stage 48 V – 1 V DC-DC converter, 3-D real-time LiDAR imaging camera, and an LTE compatible envelope tracking supply in booth #2244.

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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs

This article presents an envelope tracking power supply using EPC8004 high frequency eGaN® FETs for 4G LTE wireless base station infrastructure. An ET power supply with four-phase soft-switching buck converter using eGaN FETs is able to accurately track a 20 MHz 7 db PAPR LTE envelope signal with greater than 92% total efficiency, delivering 60 W average power. The design is scalable to satisfy different power levels by choosing different eGaN FETs.

Bodo’s Power Systems
Yuanzhe Zhang, Ph.D., Michael de Rooij, Ph.D.
March, 2016
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100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz AirFuel Wireless Power Standard

100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz  AirFuel Wireless Power Standard

EPC9065 development board has the highest power and highest efficiency at 6.78 MHz for the AirFuelTM wireless power standard, using eGaN® FETs

EL SEGUNDO, Calif.— February 2016 — Efficient Power Conversion (EPC) announces the EPC9065, a development board that can serve as the amplifier stage for AirFuelTM Alliance Class 4 and Class 5 wireless power transfer applications. This board is a Zero Voltage Switching (ZVS) differential-mode class-D amplifier development board configured at, but is not limited to, 6.78 MHz (Lowest ISM band).

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Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications

Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications

New EPC2040 eGaN® FET offers extremely fast and consistent switching, enabling greater resolution and accuracy in applications dependent upon pulsed laser drivers, which include LiDAR systems used for guidance in 3D sensing in augmented reality systems and autonomous vehicles

EL SEGUNDO, Calif. — February 2016 — Efficient Power Conversion Corporation (EPC) announces the EPC2040 power transistor, an extremely small, fast switching gallium nitride power transistor that enables superior resolution, faster response time, and greater accuracy for high speed end-use applications. High stability of the threshold over temperature ensures the high stability as the laser heats up. For example, this product is ideal for pulsed laser drivers used in LiDAR technology, the technology at the heart of autonomous vehicle guidance systems and augmented reality platforms. The end result of the EPC2040’s superior performance is increased accuracy and higher resolution in these systems.

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Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

In this installment, we present a method to design a suitable EMI filter that can reduce unwanted frequencies to levels within radiated EMI specifications, and do this without negatively impacting the performance of the wireless power coil. In addition, the overall radiated EMI design aspects will also be covered.

EEWeb - Wireless & RF Magazine
Michael de Rooij, Ph.D.
February, 1, 2016
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Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

EPC9059 development board showcases industry’s first monolithic half-bridge enhancement-mode gallium nitride (eGaN®) integrated circuits for high current, high frequency point-of-load applications for increased power density.

EL SEGUNDO, Calif.— January 2016 — Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output current. In this application two 30 V EPC2100 eGaN IC’s operating in parallel with a single onboard gate driver to achieve higher output currents. GaN devices have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation.

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Getting from 48 V to load voltage

Getting from 48 V to load voltage

Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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DesignCon 2016 book signing with engineering icons

DesignCon 2016 book signing with engineering icons

Some of the best minds in our industry, like the group that was at a DesignCon 2016 book signing. Among them was Michael de Rooij, Efficient Power Conversion VP of Application Engineering who signed copies of his book Wireless Power Handbook, Second Edition. DesignCon attendees enjoyed browsing and buying books and having the authors autograph them as well. The authors also answered questions and discussed their areas of expertise with inquiring minds in attendance.

EDN Network
January 22, 2016
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Advanced Video Series Teaches How to Design with Gallium Nitride (GaN) Power Devices for State-of-the-Art Power Conversion

Advanced Video Series Teaches How to Design with Gallium Nitride (GaN) Power Devices for State-of-the-Art Power Conversion

Produced by industry experts, EPC has posted a nine-part educational video series on design basics, DC-DC conversion, wireless charging, reliability, and other applications for gallium nitride FETs and integrated circuits.

EL SEGUNDO, Calif. – January 2016 – Efficient Power Conversion Corporation (www.epc-co.com) has expanded its video library on GaN technology with the addition of a nine-part educational video series designed to provide power system design engineers advanced technical information and application examples on how to design more efficient power conversion systems using gallium nitride-based transistors and integrated circuits.

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Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz.

EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz.

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EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

Award Recognizes Innovation in Power Device Technology for Enabling the Commercialization of GaN

EL SEGUNDO, Calif, — January 2016 — Today, Efficient Power Conversion (EPC) announced that its CEO Alex Lidow was selected as the recipient of the 2015 SEMI Award for North America for the innovation of power device technology, enabling the commercialization of GaN. Dr. Lidow is being honored for his work in the area of Process and Technology Integration.

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Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Zhang will be creating benchmark envelope tracking designs and assisting customers in the use of eGaN® FETs for high frequency, high- performance power conversion systems.

EL SEGUNDO, Calif.—January 2016 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. Yuanzhe Zhang has joined the EPC engineering team as Director, Applications Engineering.

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