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500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology.

EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The power stage is a conventional hard-switched 300 kHz isolated buck converter.

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Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System

Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System

Wireless Power Handbook is a guide to designing an efficient amplifier for a wireless power transfer system, taking advantage of the superior performance of gallium nitride power transistors.

EL SEGUNDO, Calif. – March 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride-based transistors. As a supplement to EPC’s GaN Transistors for Efficient Power Conversion, this new practical guide provides step-by-step analysis on the use of GaN transistors in wireless power transfer. /p> Read more

Where is GaN Going?

Where is GaN Going?

Enhancement-mode gallium nitride (GaN) transistors have been commercially available for over five years. Commercially available GaN FETs are designed to be both higher performance and lower cost than state-of-the-art silicon-based power MOSFETs. This achievement marks the first time in 60 years that any technology rivals silicon both in terms of performance and cost, and signals the ultimate displacement of the venerable, but aging power MOSFET.

EDN
Alex Lidow
February 18, 2015

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Bloomberg TV Interviews Alex Lidow

Bloomberg TV Interviews Alex Lidow

EPC’s CEO and Co-Founder, Alex Lidow, has spent much of his career developing a superefficient replacement for silicon. Hear his interview on Bloomberg TV.

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Bloomberg TV
February 17, 2015

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The Semiconductor Revolutionary

Ashlee Vance at Bloomberg Business profiles EPC. Silicon has enjoyed some serious staying power. For going on 60 years, it’s been the semiconductor of choice at the heart of transistors—the tiny switches that power the Information Age. A valley has been named after it. Many billion-dollar empires have been forged from it. And now—look away, silicon—it may finally be on the verge of being replaced.

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Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.

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CMOS finds its match: GaN ignites shift in power

Speaking from an industry perspective, technologies only exist for as long as they yield the benefits and capabilities that promise man a certain advantage. That said, mainstream silicon CMOS technology has afforded the industry immeasurable gains that it has thoroughly benefitted from. The question now is this. Is the sun shining down on CMOS ready to set? An emerging class of GaN power chips is finally knocking down the final cost barriers to their adoption. The chips will enable a wide range of applications from wireless charging to autonomous vehicles and more efficient cellular communications, according to a DesignCon keynoter.

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EETimes Asia
February, 2015

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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GaN technology will transform the future

For the first time in 60 years, a new higher-performance semiconductor technology is less expensive to produce than the silicon counterpart. Gallium nitride (GaN), has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than silicon. GaN transistors have unleashed new applications as a result of their ability to switch higher voltages and higher currents faster than any transistor before. These extraordinary characteristics have ushered in new applications capable of transforming the future. But this is just the beginning.

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EDN
By: Alex Lidow
January, 2015

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Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

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Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors.

EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award.

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How to GaN: Improving Electrical and Thermal Performance

In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.

EEWeb
By: Alex Lidow
December, 2014

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Panasonic breathes new life into Technics – features GaN for high speed switching

Technics is back. Panasonic has unveiled the first new hi-fi products from the highly-regarded brand in 6 years. The new Reference Class system is made up of three components – a stereo power amp, a network audio control player and a speaker system. The amp uses a JENO Digital Engine to eliminate jitter and nip noise in the bud, and Load Adaptive Phase Calibration (LAPC) for flat amplitude-phase frequency delivery. It features GaN for high speed switching while keeping signal loss low, a proprietary digital link input, analog XLR input, analog RCA input, bi-wiring speaker terminals, and a silent linear power supply.

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Profiles in Design: Alex Lidow, Ph.D.

DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion.

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How to measure the world's fastest power switch

Gallium Nitride (GaN) FETS are poised to replace silicon power devices in voltage regulators and DC-DC power supplies. Their switching speeds are significantly faster and their RDS(on) is lower than silicon MOSFETS. That can lead to higher power efficiency power sources, which is good for all of us. If you're designing power circuits with GaN devices, you need a grasp of the device's switching speed.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads.

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