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Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications

Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications

MILPITAS, Calif., May 25, 2016 /PRNewswire/ -- Intersil Corporation (NASDAQ: ISIL), a leading provider of innovative power management and precision analog solutions, today announced plans to extend its market leading radiation tolerant portfolio to include Gallium Nitride (GaN) power conversion ICs for satellites and other harsh environment applications.

PR Newswire
May 25, 2016
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eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers.

Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications. In our first installment we provided an overview of eGaN FET field reliability which included 6 years of volume production shipment, and greater than 17 billion total device hours recorded. A subsequent calculated Failure In Time (FIT – failures in 109 hours) of approximately 0.24 FITs shows excellent field reliability performance to date.

Plant Analog
Chris Jakubiec
May 1, 2016
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New Web-based GaN Product Selector Guide from EPC Simplifies Product Selection for High Performance Power Conversion Systems

New Web-based GaN Product Selector Guide from EPC Simplifies Product Selection for High Performance Power Conversion Systems

Designers using state-of-the-art GaN transistors and IC’s for power conversion now have the use of an interactive web-based parametric selection tool to search for the best possible GaN solution for their given power conversion system.

EL SEGUNDO, Calif.—April 2016— Efficient Power Conversion Corporation (EPC) announces the implementation of a user-controlled GaN product selector search tool on the EPC website, epc-co.com. Based upon years of EPC customer interactions, this web-based product selector guide provides power system design engineers the following:

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Rethinking Server Power Architecture in a Post-Silicon World

Rethinking Server Power Architecture in a Post-Silicon World

The demand for information in our society is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the Internet of Things, this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data.

EEWeb
Alex Lidow, Ph.D., David Reusch, Ph.D., and John Glaser, Ph.D.
March, 2016
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Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications

Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications

New EPC2040 eGaN® FET offers extremely fast and consistent switching, enabling greater resolution and accuracy in applications dependent upon pulsed laser drivers, which include LiDAR systems used for guidance in 3D sensing in augmented reality systems and autonomous vehicles

EL SEGUNDO, Calif. — February 2016 — Efficient Power Conversion Corporation (EPC) announces the EPC2040 power transistor, an extremely small, fast switching gallium nitride power transistor that enables superior resolution, faster response time, and greater accuracy for high speed end-use applications. High stability of the threshold over temperature ensures the high stability as the laser heats up. For example, this product is ideal for pulsed laser drivers used in LiDAR technology, the technology at the heart of autonomous vehicle guidance systems and augmented reality platforms. The end result of the EPC2040’s superior performance is increased accuracy and higher resolution in these systems.

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Evolving eGaN FETs for power electronics

Evolving eGaN FETs for power electronics

The combination of lower on-resistance, faster switching speeds, lower thermal impedance, and smaller physical size of eGaN FETs continues to raise the bar for power transistor performance. As GaN technology matures, not only does the performance of these transistors rapidly improve, but significant reductions in cost are also realized. Not only will GaN devices continue to enable new applications, they will replace silicon power transistors in cost-sensitive applications as well. As a matter of fact, the first signs of this happening are already here.

Power Systems Design
By: Johan Strydom, Ph.D.
September 26, 2015
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Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs

Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs

100 volt, 1 amp, 550 milliohm EPC2037 enhancement-mode gallium nitride power transistor is driven directly from a digital drive and delivers high frequency switching for exceptional performance in wireless charging Class-D and Class-E amplifier applications.

EL SEGUNDO, Calif. – October 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2037 as the newest member of EPC’s family of enhancement-mode gallium nitride power transistors (eGaN® FETs).

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Efficient Power Conversion Corporation Expands eGaN Integrated Circuit Family with Dual Enhancement-Mode 120 Volt, 60 milliohm Power Transistor Ideal for Wireless Power Transfer

Efficient Power Conversion Corporation Expands eGaN Integrated Circuit Family with Dual Enhancement-Mode 120 Volt, 60 milliohm Power Transistor Ideal for Wireless Power Transfer

120 volt, 60 milliohm EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.

EL SEGUNDO, Calif. – September 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits.

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Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.

By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
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Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio.

EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

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Efficient Power Conversion (EPC) Introduces eGaN Power Integrated Circuit for a New Benchmark in Efficiency and Cost for A4WP Rezence Wireless Power Transfer

Efficient Power Conversion (EPC) Introduces eGaN Power Integrated Circuit for a New Benchmark in Efficiency and Cost for A4WP Rezence Wireless Power Transfer

New EPC2107 and EPC2108 eGaN® power integrated circuits include monolithic half bridge and integrated bootstrap functions for A4WP compliant Class 2 and Class 3 solutions. In addition, development boards and complete wireless power solutions – transmit and receive devices – for quick and easy evaluations of these components are available.

EL SEGUNDO, Calif. — July 2015 — EPC announces the EPC2107 (100 V) and EPC2108 (60 V) eGaN half bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit.

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Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

eGaN®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

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Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

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Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET.

EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.

EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

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Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

New EPC2029 eGaN® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion.

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How to measure the world's fastest power switch

Gallium Nitride (GaN) FETS are poised to replace silicon power devices in voltage regulators and DC-DC power supplies. Their switching speeds are significantly faster and their RDS(on) is lower than silicon MOSFETS. That can lead to higher power efficiency power sources, which is good for all of us. If you're designing power circuits with GaN devices, you need a grasp of the device's switching speed.

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