In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same R_DS(on) as previous generation devices in die that are half the size.

How2Power
November, 2022
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EPC’s mission is to make GaN power devices that are higher performance and lower cost compared to silicon. GaN devices increase power density, improve efficiency and enable new applications and with the rising cost of energy globally, it is no surprise that the adoption rate of our GaN devices is accelerating dramatically.

Bodo’s Power Systems
November, 2022
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With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage bipolar drive circuit developments or dead-end technology branches. One of the most pernicious is the topic of bipolar drive. In actuality, unipolar drives are the best way to drive eGaN^® FETs.

Power Electronics Tips
October, 2022
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Gallium nitride devices are leading the innovation in power conversion. The benefits of GaN-based inverters are becoming increasingly evident in motor drive applications.

Power Electronics News
October, 2022
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As the level of automation increases in machines, detailed awareness of the surroundings becomes necessary. Time-of-flight based 3D imaging systems have become the eyes of machines. eGaN^® technology has been the workhorse of laser drivers for these systems, enabling the resolution to make intelligent decisions.

Bodo’s Power Systems
October, 2022
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In this article, different power loop layouts are analyzed with simultaneous considerations for thermal management and electric parasitics.

The results show that an improved layout can provide a significant reduction in operating temperature rise while maintaining electrical performance benefits.

EE Power
October, 2022
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There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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EPC’s inverter reference design is based around a GaN chip to reduce powertrain sizes

E-mobility Engineering
September, 2022
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GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications, including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio

Power Electronics News
September, 2022
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Easy Engineering interviewed EPC’s Director of Marketing, Renee Yawger, on the current state of GaN adoption and the future of GaN technology.

Easy Engineering
May, 2022
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One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
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Users of GaN FETs and ICs now have a tool to determine the derating needed in an application and reduce voltage derating factors. EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides demonstrations for two synchronous rectification application examples.

Electronic Specifier
May, 2022
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This article presents a two-phase DC/DC GaN converter with 120 VDC input operating at 6.7 MHz. 120 VDC is a standard voltage level in the secondary power system at the International Space Station (ISS). Using GaN FET’s high power density and ultra-fast switching, Tell-i’s newly developed SDK board uses two phases to exceed normal switching speeds. Supporting a standard 120-V bus voltage, as used in systems like the ISS, the multi-phase configuration allows interleaving converters to achieve effective switching at 3 MHz, 5 MHz, and an outstanding 6.87 MHz. Optimal and compact layout is achieved with the use of four EPC2019 GaN transistors and two LMG1210 gate drivers for small gate drive and power loops.

Power Electronics News
April, 2022
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The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.

Bodo’s Power Systems
April, 2022
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The mainstream materials for wide-bandgap (WBG) semiconductor power components are silicon carbide (SiC) and gallium nitride (GaN). They become various power system applications' most-preferred devices today with the rising awareness of energy conservation and sustainability. This was the first time Tech Taipei 2022 Conference used WBG as its theme. Speakers from key players in the industry were invited from design, manufacturing and testing fields to share with over 400 participants at the conference their latest technology and application trends.

EE Times Taiwan
March 25, 2022
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As servers move to 48V, GaN transistors will beat today's silicon MOSFETs, leading to better performance and cost.

Data Center Dynamics
March, 2022
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

Robotics Tomorrow
March, 2022
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