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200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

Categories: Press Releases
200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

The EPC2307 is footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V 3.8 mΩ EPC2306, the 150 V, 3 mΩ EPC2305, the 150 V, 6 mΩ EPC2308, and the 200 V, 5 mΩ EPC2304 allowing designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

The devices feature a thermally enhanced QFN package with exposed top. The extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behavior, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market.

This family of devices bring several benefits to motor drive designs including very short deadtimes for high motor + inverter system efficiency, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for lower cost.

For DC-DC conversion applications, these devices offer up to five times higher power density, excellent heat dissipation, and lower system costs in both hard switching and soft switching designs.  Additionally, ringing and overshoot are both significantly reduced for better EMI.

“The continued expansion of this family of footprint compatible, easy to assemble devices provides engineers the flexibility to optimize their designs quickly without delaying time-to-market,” said Alex Lidow, EPC’s co-founder, and CEO. “This family of devices is ideal for smaller, lighter weight motor drives, more efficient and smaller DC-DC converters, and higher efficiency solar optimizers and microinverters.”

Development Board

The EPC90150 development board is a half bridge featuring the EPC2307 GaN. The purpose of these boards is to simplify the evaluation process and speed time to market. The 2” x 2” (50.8 mm x 50.8 mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.

Price and Availability

The EPC2307 is priced at $3.54 each in 1 Ku volumes.

The EPC90150 development board is priced at $200.00 each.

All devices and boards are available for immediate delivery from Digi-Key at

Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at:

About EPC

EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Efficient Power Conversion:  Renee Yawger tel: +1.908.619.9678 email: [email protected]