Senior representatives GaN power manufacturers (EPC, Transphorm, GaN Systems, Infineon and Navitas) presented details of their significant developments in moving the technology into mainstream, volume applications. Based on the information presented in the five talks, there are three significant reasons to expect dramatic growth in adoption of GaN power devices.

Bodo’s Power Systems
June 1, 2016
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By: Steve Taranovich, EDN
March 15, 2013

As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications.

Ashok Bindra
How2Power Today
December, 2012

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By: Sun Changhua
www.digitimes.com.tw
December 20, 2012

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With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.

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EDN China April 2012 Print Issue

EDN China April 2012

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.

By Margery Conner
EDN
June 20, 2011

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.

By Mark LaPedus
EE Times
March 8, 2010

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The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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