GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN^®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine.

Electronic Specifier
August, 2019
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Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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It is expected that there will be more than 175 zettabytes of data by 2025. Data center construction and deployment, as well as upgrading efforts in existing older ones, is booming with the advent of 5G, starting in earnest at the 2020 Olympics in Japan (6G is already being discussed for future development) and the growth of artificial intelligence (AI) and machine learning (ML).

It makes so much sense to me that GaN should be the power transistor of choice in Data Center power architectures where size, efficiency and speed are critical. In all the topologies with 48 VIN, the highest efficiency was achieved with GaN devices.

EDN
June 2019
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Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.

EL SEGUNDO, Calif.— June 2019 — EPC announces a partnership with Spirit Electronics to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices. 

Today’s GaN FETs are improving rapidly in size and performance. The benchmark devices are still 300 times away from their theoretical performance limits. The early GaN adopters needed the speed. Big examples were lidar systems for autonomous cars, drones, and robots, and 4G/LTE base stations. The volume has grown, and now GaN power devices are at a point where the prices are equivalent to the slower, bigger and aging power MOSFET. Thus, it is time for GaN’s frontal assault!

Bodo’s Power Systems
June 2019
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Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems integration.

EL SEGUNDO, Calif.— June 2019 — EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration.  EPC’s eGaN^® FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps. 

EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2019 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and transportation.

EL SEGUNDO, Calif.— April 2019 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2019 in Nuremberg, Germany from May 7^th through the 9th. In addition, in Hall 7, Stand 335, the company will exhibit its latest eGaN^® FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2214, 80 V gallium nitride transistor optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— April 2019 — EPC announces successful AEC Q101 qualification of the 80 V EPC2214 designed for lidar systems in the automotive industry and other harsh environments. 

Efficient Power Conversion (EPC) has recently introduced two new, 100V, GaN devices that are able to handle 48V server and automotive needs. I will be examining the 48V server power solutions to the processor as well as in automotive and energy storage systems (See my article Bi-directional DC/DC power supplies: Which way do we go?) bi-directional supplies, in an EDN exclusive article coming up in the near future. GaN power transistors MUST be a part of these kinds of architectures; from my point-of-view there is no better alternative.

Planet Analog
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Efficient Power Conversion, is at the forefront of GaN-based device development. In this video, EPC CEO Alex Lidow talks with Alix Paultre about the various design-ins at the show that underscore the advantages GaN-based devices can provide.

Embedded Computer Design
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