In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
Read article

As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
Read article

jjPLUS and EPC, both members of the AirFuel Alliance, to show how large area wireless power surfaces can be designed following the most advanced AirFuel™ Resonant standard. Go for a wirelessly powered home and office!

EL SEGUNDO, Calif. — June 2018 — jjPLUS Corporation, a design manufacturer of advanced wireless communication and wireless power embedded solution company, will demonstrate the next-generation magnetic resonance wireless power transfer (WPT) technology at InnoVEX 2018 in Taipei. Joining jjPLUS will be its technology partner − Efficient Power Conversion Corporation (EPC). The demonstration units will be located in TWTC Hall 3, booth no. G0309a on June 6 – 8. Both jjPLUS and EPC participated in the AirFuel working committees and in the AirFuel Developers Forum in March 2018.

Superior characteristics of eGaN^® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

Spirit Electronics now provides distribution support to assist customers in adopting eGaN^® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.  

Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5^th through the 7^th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN^® FETs and ICs in customers’ end products that are enabled by eGaN technology.

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
Read article

EPC continues its 2018 GaN China Roadshow with participation in the upcoming WiPDA 2018 conference in Xian May 17^th through 18^th

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) started a GaN China Roadshow 2018 beginning in Shenzhen in March with technical presentations at the AirFuel Developers Forum. The second event in the roadshow was participation in SEMI China’s Power and Compound Semiconductor International Forum held in Shanghai, where Alex Lidow, CEO gave a keynote speech. Soon, from May 17 to 19, EPC will be meeting with engineers to share knowledge and demonstrations of eGaN^® devices, at WiPDA Asia IEEE workshop to be held at the Cullinan Huicheng Hotel in Xi’an.  Beyond WiPDA, the next stop for the EPC roadshow will be PCIM Asia, to be held in Shanghai, June 26^th through 28^th.  At this conference, EPC experts will be giving technical presentations on the use of GaN devices in wireless power transfer and LiDAR for autonomous cars.

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.

EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN^® devices, opening a range of applications in automotive and other harsh environments.  The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 V_DS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment. 

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

View videos below.

Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
Read article

In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

Power Electronics News
View video

LIDAR is made up of a laser (or arrays) capable of transmitting pulsed light over the required range of interest, and a high-speed, low-noise receiver for reflected signal analysis. A portion of this light is reflected or scattered back to the receiver according to the reflectivity of the target.

EDN Network
Read article

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including wireless charging, DC/DC, LiDAR and automotive.

EL SEGUNDO, Calif. — March 8, 2018 — The EPC executive and technical team will be engaged in three industry events in Shenzhen and Shanghai, China on March 14 – 16 in demonstrating and sharing with engineers on how to maximize GaN FET and IC performance in their innovative designs, to win their customers.

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.

Planet Analog
Read article

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN^® power transistors.

EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency.

Gamers may not care about the finer points of gallium nitride (eGaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will enable a new generation of gaming laptops with much smaller power supplies than in the past.

Venture Beat
Read article