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Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems

Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of two new gallium nitride devices.

EL SEGUNDO, Calif.— January 2019 — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments.  The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively.

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The Power and Evolution of GaN, Part 4: Bringing Precision Control to Surgical Robots with eGaN FETs and IC

The Power and Evolution of GaN, Part 4: Bringing Precision Control to Surgical Robots with eGaN FETs and IC

In this series, how the superior switching speed of gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications is being discussed. These applications are transforming industries such as light detection and ranging (LiDAR) for autonomous vehicles, envelope tracking for 5G communications and large surface area wireless power for the home and office. In this article, how GaN power devices are transforming medicine by bringing precision control to surgical robots is examined.

Power Systems Design
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Efficient Power Conversion (EPC) to Display GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR for Autonomous Cars at 2019 CES

Efficient Power Conversion (EPC) to Display GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR for Autonomous Cars at 2019 CES

Within the EPC hospitality suite, wirelessly powered systems for the home and GaN based, industry-leading LiDAR systems used in autonomous vehicles will be on display.

EL SEGUNDO, Calif. — December 2018 — Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications – wireless power and LiDAR for self-driving cars – at the 2018 Consumer Electronics Show (CES) in Las Vegas, January 8th through the 11th.

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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
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EPC Expands Asian Team to Unleash the Power of Innovations for Customer Solutions

EPC Expands Asian Team to Unleash the Power of Innovations for Customer Solutions

As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific.

EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and capture new market opportunities.

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Gallium nitride is the silicon of the future

Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

The Power and Evolution of GaN – Part 2 of 6 part series

Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

With the emergence of the 48V bus architecture, a new hybrid converter using gallium nitride (GaN) transistors can be employed which achieves a peak efficiency that exceeds 95% and with 225W/in3 power density. Of great interest for data center applications, where light load efficiency is critical for energy savings, the converter efficiency is kept higher than 90% down to a 20% load.

PowerPulse
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EPC Partners with Wireless Power Innovators to Lead the Way in 5G Applications and Beyond

EPC Partners with Wireless Power Innovators to Lead the Way in 5G Applications and Beyond

Workshop on Wireless Power Transfer event features industry leaders from AirFuel Alliance, Efficient Power Conversion Corp, jjPLUS and IHS Market

Taipei, Taiwan – October 30, 2018 – There is increasing demand for medium and high-power wireless power transfer (WPT) for new applications such as 5G, notebooks, robots, machine tools and medical equipment. What will be the next killer application for wireless power?

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Podcast: GaN for Connected Vehicles

Podcast: GaN for Connected Vehicles

In this episode of the PSDcast, we’re talking to Alex Lidow from Efficient Power Conversion about gallium nitride’s (GaN) application in connected automobiles.

Power Systems Design
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GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc-dc converters, ac-dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal-oxide-semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let's look at three key risk factors: supply chain risk, cost risk, and reliability risk.

IEEE Spectrum
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The Power and Evolution of GaN

The Power and Evolution of GaN

Gallium nitride(GaN)-on-silicon low voltage power devices have enabled many new applications since commercial availability began in 2010. New markets, such as light detection and ranging (LiDAR), envelope tracking, and wireless power, emerged due to the superior switching speed of GaN. These new applications have helped develop a strong supply chain, low production costs, and an enviable reliability record. All of this provides adequate incentive for the more conservative design engineers in applications, such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. In this series, a few of the many, high volume applications taking advantage of GaN to achieve new levels of end-product differentiation will be discussed. First, it is useful to explore the factors attributing to the rapid acceleration of the adoption rate.

Power Systems Design
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Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

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EPC Receives 2018 Top 10 Power Products Award from Electronic Products China Magazine-21iC Media

EPC Receives  2018 Top 10 Power Products Award from  Electronic Products China Magazine-21iC Media

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.

EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.

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EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.

EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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Spirit Tech Talk with EPC

Spirit Tech Talk with EPC

Spirit's Marti McCurdy and EPC's CEO Alex Lidow discuss the performance and cost benefits of gallium nitride over silicon and how leading companies the world over work with EPC to develop their next gen technologies with the power of GaN.

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Designing LiDAR and more into Autonomous E racing

Designing LiDAR and more into Autonomous E racing

The reason eGaN FETs (and now ICs) are used in all the LiDAR systems for autonomous cars, and now autonomous race cars, is that they enable much higher resolution (due to extremely short laser pulses), faster image speed (due to short laser pulses), and the ability to see greater distances with high accuracy (due to fast laser pulses at very high current).

Planet Analog
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EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications

EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications

EL SEGUNDO, Calif. — June 22, 2018 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, will meet with design engineers in power management in Shanghai, China, for knowledge exchanges on solutions using a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers, and a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET.

Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 26th, 2018 (Tuesday) at 10 a.m. – 10.50 a.m. at Exhibition Hall No. 2, 1/F of Shanghai World Expo Exhibition and Convention Center, 1099 Guozhan Road, Shanghai, China.

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