ePower™ Stage ICs provide fast shutdown in fault condition, support continuous 100% duty-cycle operation, and have single input pin PWM option to ease multi axis designs

EL SEGUNDO, Calif. – April 2, 2026 – Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN®) power devices, has introduced a new generation of 100 V integrated GaN power-stage ICs - EPC23108, EPC23109, EPC23110 and EPC23111 - targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology.

EPC has developed a new converter designed for artificial intelligence-based "sidecar" servers, where the power supply is racked separately from the information technology equipment. This board is a fixed-ratio converter that steps 800 volts down to 12 volts. To achieve a total output of 6 kW, the design utilises 100-volt to 12-volt modules that are each rated at 750 W. The inputs of these individual modules are cascaded in series, while their outputs are connected in parallel.

The entire 6 kW module has a compact physical footprint, measuring 106 mm by 47 mm, and is only 8 mm thick. This high level of miniaturisation is enabled by GaN technology.

EPC has demonstrated the EPC 91122 board featuring the EPC 3111 module, a 100-volt, three-phase module designed for motor control applications.

The board integrates a controller, power module, two current sensors, and a position sensor. Because the Gallium Nitride (GaN) technology enables switching at 100 kHz, the design solely relies on MLCC capacitors, completely eliminating the need for bulkier electrolytic capacitors.

In this webinar, Alex Lidow, CEO of Efficient Power Conversion (EPC) walks through how GaN has crossed a key performance boundary, now outperforming the best silicon MOSFETs at all voltages and in all topologies. You’ll see concrete data on on-resistance, hard and soft switching losses, and real-world efficiency gains in AI, server, and point-of-load converters - from tens of volts down to sub-1 V rails. Lidow also previews future integration-focused generations that push GaN even closer to its theoretical limits.

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This article describes GaN as the natural successor to silicon MOSFETs in the 100–650 V class, showing how material figures of merit directly translate into lower on-resistance, higher switching frequency, and much higher power density at competitive cost.

Silicon power MOSFETs have driven the evolution of switch-mode power conversion since the late 1970s, replacing bipolar transistors, thanks to majority-carrier operation, ruggedness, and ease of drive. For decades, continuous structural improvements—cell pitch, trench, and superjunction—pushed R_DS(on) down while keeping breakdown capability and manufacturability. However, silicon is now essentially at its theoretical limit for unipolar devices in the 100–600 V range.

EDN
March 2026

Read article

One of the oldest challenges of power electronics is the paralleling of multiple transistors to obtain a higher-current switch. This task is rarely straightforward, as two or more transistors never exhibit perfectly identical electrical parameters, preventing an even distribution of current.

For early designers of power converters, the feat was even more arduous because available components were current-driven bipolar junction transistors (BJTs). This means that no intrinsic stabilizing effect can be leveraged to help attain an even current sharing.  In fact, the required base-to-emitter voltage (V_BE) decreases as temperature increases (-2 mV/°C)—under normal operation—so even a small imbalance causes the transistor with lower V_BE to conduct more current and heat up further, leading to failures.

Power Electronics News
March 2026

Read article

50 A_RMS three-phase inverter platform built around the Gen-7 EPC2366 eGaN® power transistor, showcased at EPC’s booth at APEC

SAN ANTONIO, Texas - March 23, 2026 - At APEC 2026, Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN®) power devices, is introducing the EPC91121 motor drive inverter evaluation board, built around the Gen-7 EPC2366 40 V eGaN® power transistor and showcasing the platform at the company’s booth (#1935).

Closing the gap between lab-generated reliability testing and real-world mission profiles

EL SEGUNDO, Calif. – March 19, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced the release of its Phase 18 Reliability Report, providing new insights into eGaN device reliability. The report builds on previous work by closing the gap between lab-generated reliability testing and real-world device performance across mission profiles. It introduces new methodologies to better predict device lifetime under application-specific stress conditions, shaped through close collaboration with customers and supported by peer-reviewed research and international conference publications.

100 V GaN-based inverter reference design delivering 50 ARMS phase current, integrated sensing, and PWM operation up to 150 kHz.

EL SEGUNDO, Calif. – March 12, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced the EPC91202 evaluation board, a complete three-phase BLDC motor drive inverter designed to accelerate development of high-efficiency motor drive applications in robotics, e-mobility, drones, industrial automation, and battery-powered systems.

In this video, you will find a conversation with Alex Lidow - the inventor of the original Power MOSFET and HEXFET during his time at International Rectifier. Alex later became CEO of the company founded by his father and today is the Founder and CEO of Efficient Power Conversion (EPC), known for producing some of the most efficient GaN FETs on the market. In the discussion, you will hear the story of how the power MOSFET was invented - on Alex’s very first day on the job - and how that breakthrough helped shape modern power electronics.

The conversation also dives into silicon physics, the rise of GaN technologies, and the growing power demands of AI data centers and humanoid robots, offering a fascinating perspective that connects the origins of power semiconductors with the technologies driving the future of computing and electrification.

Watch Full Interview

This paper examines the impact of parasitic capacitances on the dynamic current sharing behaviour of Gallium Nitride (GaN) field-effect transistors (FETs) operating in parallel configurations. As GaN technology continues to gain prominence in high-performance power electronic systems, paralleling multiple devices has become a common strategy to increase current-handling capability.

Salvatore Musumeci PhD, Vincenzo Barba PhD, Michele Pastorelli Professor, Marco Palma MSc

ScienceDirect
Read article

Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept of “AI factories” has emerged, reframing data centers as productivity-driven systems optimized for high compute density.

Bodo’s Power Systems
March 2026
Read Article by Alejandro Pozo and Michael De Rooij

In this episode of Chips, Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC), explores a lifetime in power semiconductor innovation. From early work on HEXFET power MOSFETs to pioneering gallium nitride technology, Alex shares the decisions, mistakes, and vision that shaped his career. We discuss GaN’s impact on efficiency, AI data centers, robotics, and satellites - and why engineers should “aim ahead of the target” when choosing their future path.

Electronics Weekly
Listen to podcast

Enabling scalable power for AI computing and next-generation robotics

EL SEGUNDO, Calif. — February 26, 2026 — Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, will showcase its latest generation GaN technology for AI infrastructure and robotics at the Applied Power Electronics Conference (APEC) 2026. During the event, EPC will highlight how Gen 7 GaN and highly integrated GaN ICs enable scalable deployment in high-density computing and next-generation robotic systems, moving beyond demonstration platforms toward production-ready power architectures at its booth #1935. At the booth, EPC engineers will host a series of technical presentations covering system architectures, reliability methodologies and application implementations.

Integrated GaN power stage with onboard control, sensing, and communication, delivering up to 20 A_RMS in a 32 mm circular design for space-constrained robotic applications.

EL SEGUNDO, Calif. – February 23, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced the release of the EPC91122, a high-performance 3-phase BLDC motor drive inverter evaluation board specifically engineered for humanoid robot joint applications. Featuring EPC’s highly integrated EPC33110 3-phase ePower™ Stage module, the EPC91122 delivers up to 20 A_RMS (28 A_peak) phase current in an ultra-compact form factor optimized for space-constrained robotic joints, integrating all key functions of a complete motor drive inverter, including a microcontroller, motor shaft angular sensor, housekeeping power supplies, accurate voltage and current sense.

EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power.

EL SEGUNDO, Calif. – February 10, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, a premier global supplier of advanced semiconductor solutions and high-voltage GaN transistors.

EPC’s first seventh-generation eGaN^® device enters mass production, delivering up to 3× better performance than silicon MOSFETs

EL SEGUNDO, Calif. – January 30,  2026 - Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN) power devices, announces the start of volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN® family of power transistors. This seventh-generation platform delivers a new state-of-the art in transistor performance. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical R_DS(on) of 0.84 mΩ and a highly optimized R_DS(on) × Q_G figure of merit (FoM) of 12.6 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.

The EPC2366 40 V eGaN^® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics.

El Segundo, CA - January 13, 2026 - Efficient Power Conversion (EPC) is proud to announce that the EPC2366 40 V enhancement-mode gallium nitride (eGaN) power transistor has been honored with the EPDT 2025 Product of the Year Award in the Power Transistor category. This recognition underscores EPC’s leadership in delivering cutting-edge GaN technology that drives higher efficiency and performance across data center, robotics, and AI infrastructure applications.

The EPC33110 is a three-phase module that utilizes gallium nitride (GaN) monolithic integrated circuits, enabling the development of smaller, lighter motor drive inverters. Its compact design is ideal for drone and humanoid robot applications, supporting higher switching frequencies with respect to traditional silicon-based inverters, ultimately improving system size, weight, and performance.

Bodo’s Power Systems
December 2025
Read article Read more

EL SEGUNDO, CA — December 8, 2025 — EPC is pleased to announce the appointment of Maurizio Di Paolo Emilio as Director of Global Marketing Communications. Maurizio joins EPC with an extensive background in the power semiconductor sector with expertise in Wide Band Gap (WBG) technologies.

With a career dedicated to advancing next-generation power solutions, Maurizio has evaluated leading-edge semiconductor products from early concept through final production release. In addition to publishing many articles on the subject, he has authored and edited several books on the subject. His technical insight, industry knowledge, and commitment to innovation position him as a valuable addition to the EPC leadership team.