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IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.

EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT).

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WiGaN: eGaN FETs for Hard-Switching Converters at High Frequency

This article presents hard-switching buck converter results switching at 10 MHz and gives a breakdown of the converter losses. It will demonstrate the unmatched high frequency performance capability currently available using eGaN® FETs and also highlight the current limitations to pushing to even higher switching frequencies.

EEWeb
By: Alex Lidow
August, 2014

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EPC: GaN Ambition

Intent on flooding power device markets with GaN-on-silicon FETs, Alex Lidow, EPC, talks to Compound Semiconductor about future market opportunities.

Compound Semiconductor
July, 2014
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Development Boards Make Evaluating eGaN FETs Simple

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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Efficient Power Conversion (EPC) Introduces Complete A4WP Compliant High Efficiency Wireless Power Transfer Demonstration Kit Delivering 35 W and Operating at 6.78 MHz

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) wireless kits have three components:

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Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

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GaN: Primed for Power

With high-voltage GaN devices close to commercialization, manufacturers can, at last, look forward massive market growth.

Compound Semiconductor
July, 2014
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Efficient Power Conversion (EPC) Introduces High Efficiency Wireless Power Transfer Demonstration System Operating at 6.78 MHz Featuring High Frequency Gallium Nitride (eGaN) FETs

The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

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Power GaN Market - 80% ANNUAL GROWTH FROM 2016-2020!

Overall, 2020 could see an estimated device market size of almost $600M, leading to approximately 580,000 x 6” wafers to be processed. Ramp-up will be quite impressive starting in 2016, at an estimated 80% CAGR through 2020, based upon a scenario where EV/HEV begins adopting GaN in 2018-2019. The power supply/PFC segment will dominate the business from 2015-2018, ultimately representing 50% of device sales. At that point, automotive will then catch-up.

Yole Development
June, 2014
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Dr. John Glaser Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering.

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eGaN FETs for Class A RF Amplifiers

High frequency enhancement mode transistors, such as the EPC8000 series eGaN® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

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GaN manufacturing leverages the installed silicon supply chain

Hundreds of billions of dollars have been spent to make the silicon technology supply chain incredibly efficient. How can emerging, high performance GaN transistors compete against this huge installed base of silicon-based production? Simple, the production of GaN transistors leverages the installed silicon supply chain, which significantly lowers the cost of GaN transistors!

Power Systems Design
By Alex Lidow, Ph.D.
May 27, 2014

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Efficient Power Conversion (EPC) Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transisto

DrGaNPLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors

EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

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IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems.

EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT).

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Power Conversion: The End of the Road for Silicon

Silicon has reached theoretical limits of performance in power conversion. Gallium nitride (GaN) and silicon carbide (SiC) will displace much of the $12B market for silicon power MOSFETs. There is product in production today that is 5-10 times better than the theoretical limit of silicon.

Bodo’s Power Systems
By Alex Lidow, Ph.D.
May, 2014

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Performance Evaluation of Enhancement-Mode GaN Transistors in Class-D and Class-E Wireless Power Transfer Systems

The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article, EPC will focus on loosely coupled coils, highly-resonant wireless solutions suitable for the A4WP standard operating at either 6.78 MHz or 13.56 MHz unlicensed Industrial, Scientific and Medical (ISM) bands.

Bodo’s Power Systems
By Alex Lidow, Ph.D. and Michael De Rooij, Ph.D
May, 2014

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