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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.
EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.
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The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.
EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.
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EL SEGUNDO, Calif. — June 22, 2018 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, will meet with design engineers in power management in Shanghai, China, for knowledge exchanges on solutions using a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers, and a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET.
Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 26th, 2018 (Tuesday) at 10 a.m. – 10.50 a.m. at Exhibition Hall No. 2, 1/F of Shanghai World Expo Exhibition and Convention Center, 1099 Guozhan Road, Shanghai, China.
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Superior characteristics of eGaN® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.
EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.
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Spirit Electronics now provides distribution support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.
EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments. Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.
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Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.
EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5th through the 7th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN® FETs and ICs in customers’ end products that are enabled by eGaN technology.
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EPC continues its 2018 GaN China Roadshow with participation in the upcoming WiPDA 2018 conference in Xian May 17th through 18th
EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) started a GaN China Roadshow 2018 beginning in Shenzhen in March with technical presentations at the AirFuel Developers Forum. The second event in the roadshow was participation in SEMI China’s Power and Compound Semiconductor International Forum held in Shanghai, where Alex Lidow, CEO gave a keynote speech. Soon, from May 17 to 19, EPC will be meeting with engineers to share knowledge and demonstrations of eGaN® devices, at WiPDA Asia IEEE workshop to be held at the Cullinan Huicheng Hotel in Xi’an. Beyond WiPDA, the next stop for the EPC roadshow will be PCIM Asia, to be held in Shanghai, June 26th through 28th. At this conference, EPC experts will be giving technical presentations on the use of GaN devices in wireless power transfer and LiDAR for autonomous cars.
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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.
EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
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The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.
EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.
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EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including wireless charging, DC/DC, LiDAR and automotive.
EL SEGUNDO, Calif. — March 8, 2018 — The EPC executive and technical team will be engaged in three industry events in Shenzhen and Shanghai, China on March 14 – 16 in demonstrating and sharing with engineers on how to maximize GaN FET and IC performance in their innovative designs, to win their customers.
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EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.
EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.
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Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.
EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.
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Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors.
EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board. This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency.
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EPC2049 GaN power transistor offers power systems designers a 40 V, 5 mΩ power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.
EL SEGUNDO, Calif. — December 2017 — EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.
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Within the AirFuelTM Alliance booth at CES 2018, EPC will show how gallium nitride (GaN) semiconductors are at the core of large surface area wireless power. In the EPC hospitality suite, wirelessly powered systems for the home and GaN based, industry-leading LiDAR systems used in autonomous vehicles will be on display.
EL SEGUNDO, Calif. — December 2017 — Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications – wireless power and LiDAR for self-driving cars – at the 2018 Consumer Electronics Show (CES) in Las Vegas, January 9th through the 12th.
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Ultra-fast transition eGaN FETs used on the EPC9126HC can drive high current pulses up to 150 A and pulse widths as low as 5 ns, thus enhancing the quality of information a LiDAR system will detect, including the accuracy, precision, and processing speed.
EL SEGUNDO, Calif. — November 2017 — Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9126HCa 100 V, 150 A high current pulsed laser diode driver evaluation board. In a LiDAR system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of eGaN FETs provide power pulses to drive the laser up to ten times faster than an equivalent MOSFET, thus enhancing the overall performance of a LiDAR system.
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EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.
EL SEGUNDO, Calif — November 2017 — Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.
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The EPC9086 high efficiency half-bridge development board can operate up to 10 MHz featuring a 30 V EPC2111 eGaN® half bridge in combination with the recently introduced high speed Peregrine Semiconductor PE29102 gate driver.
EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of The EPC9086 development board, a high efficiency half-bridge development board that can operate up to 10 MHz. The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half bridge in combination with the recently introduced PE29102 gate driver from Peregrine Semiconductor.
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MIGVAN now represents EPC’s Israel sales, marketing, and technical support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems using gallium nitride
EL SEGUNDO, Calif.— October 2017 — To support its accelerating growth throughout Israel, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of MIGVAN as its sales, marketing, and technical support representative. MIGVAN Technologies & Engineering Ltd, founded in 1988, is devoted to promoting and selling advanced technology electronic components and subsystems to the Israeli electronics industry.
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Superior characteristics of eGaN® FETs and ICs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size used in these demonstration kits show that GaN FETs and ICs are ideal for increasing efficiency in highly resonant, AirFuel™ Alliance compatible wireless power transfer systems.
EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of two new demonstration kits -- the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver device and the EPC9128, consisting of a 16 W, class 3 amplifier and two receiver devices (categories 3 and 4). These systems, coupled with previously announced EPC9120, 33 W class 4 and the EPC9121 multi-mode kit capable of operating to either an AirFuel Class 2 standard with a category 3 device or a Qi (A6)/PMA standard with a compatible receiving device provide a full range of wireless power demonstration kits to allow for complete, wide-spread implementation.
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