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EPC’s new EPC9083 development board enables power system designers to easily and quickly evaluate the high efficiency achieved with a high performance 200 V gallium nitride transistor in a class-E amplifier used in wireless power, LiDAR, current-mode class-D, and push-pull converters operating up to 15 MHz.
EL SEGUNDO, Calif.— August 2017 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the EPC9083, a high efficiency, flexible, GaN-based differential mode development board that can operate up to 15 MHz, including 6.78 MHz which is popular for wireless power applications.
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Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.
EL SEGUNDO, Calif.—August 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power charging kit, the EPC9120. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. The EPC9120 utilizes the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with full power efficiency between 80% and 90% under various operating conditions.
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EL SEGUNDO, Calif. — June 21st, 2017 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, enables a lower-cost, single transmit amplifier solution that can wirelessly charge devices, regardless of the standard used in the receiving device.
Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 28th, 2017 at 11 a.m. at Meeting Room 2, B2 of Shanghai World Expo Exhibition and Convention Center in China. Dr. Michael de Rooij, Vice President of Application Engineering, EPC, will share with engineers about a choice among topologies to achieve customer-oriented designs for high power, highly resonant wireless charging applications.
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Mr. Krueger to direct EPC’s European sales organization and assist customers in adopting eGaN® FETs and Integrated Circuits for leading-edge power conversion systems
EL SEGUNDO, Calif. — June 2017 — To support its accelerating growth, Efficient Power Conversion Corporation (EPC) is proud to announce that Wolfram Krueger has joined the EPC leadership team as Vice President of European sales. Mr. Krueger has over 30 years of sales operation experience within the semiconductor industry. His primary responsibilities at EPC are creating and implementing sales and marketing strategies to achieve the company’s sales objectives throughout Europe. He is based in Cologne, Germany.
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Taking advantage of the high performance of eGaN® FETs, Rompower Energy Systems has announced a reference design for a tiny, 65 W, 94% efficient AC/DC power adaptor for laptops and other mobile devices.
TUCSON, Az. – June 2017 – Rompower Energy Systems, an internationally recognized research and development company in the field of power conversion, announces the availability of technology for an extremely small, highly efficient AC/DC power adapter. In the quest for higher power density, the efficiency of the adapter is critical in order to decrease the heat dissipation. The reference design is measuring just 3.19 cubic inches in size, this adapter provides 65 W of power at greater than 94% efficiency over the entire input voltage range (90 Vac – 264 Vac). The adapter has a power density of 20 W/in3. This high efficiency means that the device runs cooler than standard AC/DC adapters.
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EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V.
EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is ideal for high frequency 12 V to point-of-load DC-DC conversion.
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EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters.
EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.
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Produced by industry experts, Efficient Power Conversion has posted six videos showing active end-use applications such as a wireless power tabletop, high performance LiDAR, single-stage 48 V – 1.8 V DC-DC conversion, and precision motor drive control using gallium nitride transistors and integrated circuits.
EL SEGUNDO, Calif. – April 2017 – Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.
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EPC’s Phase Nine Reliability Report documents a combined total of over 9 million GaN stress device-hours with zero failures. This report focuses on thermo-mechanical board level reliability, describing for the first time, a predictive model for solder joint integrity and showing the superior reliability of wafer level chip-scale packaging (WLCSP) GaN technology over comparable packaged devices.
EL SEGUNDO, Calif.— April 2017 — EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. The Phase Nine Reliability Report adds to the growing knowledge base previously published in EPC’s first eight reports and represents an ongoing commitment to study, learn, and share information on the reliability of GaN technology.
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EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.
EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.
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Adding to its breadth of applications research and support for EPC customer evaluation and use of GaN® FETs and ICs, the company announces the opening of an applications center and the appointment of Suvankar Biswas, Ph.D. as senior applications engineer.
EL SEGUNDO, Calif.— January 2017 — Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia. This center will increase the reach of EPC to support research and development for the applications of enhancement-mode gallium nitride transistors and ICs. In addition to traditional FET and IC power conversion applications, GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for high bandwidth 4G and 5G communications.
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Ultra fast transition eGaN® FETs used on the EPC9126 can drive laser diodes with high current pulses and total pulse widths as low as 5 ns, thus enhancing the quality of information a LiDAR system will detect, including the accuracy, precision, and processing speed.
EL SEGUNDO, Calif. — January 2017 — Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9126, a 100 V high current pulsed laser diode driver evaluation board. In a LiDAR system, used for detecting objects in autonomous vehicle applications, speed and accuracy of detection is critical. As demonstrated by this board, the rapid transition capability of eGaN FETs provide power pulses to drive the laser up to ten times faster than an equivalent MOSFET, thus enhancing the overall performance of a LiDAR system.
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In a dedicated hospitality suite at CES, the premier global event in consumer electronics, EPC will show how GaN is a core technology behind autonomous vehicles, the house of the future without power cords, the connected car, and non-invasive colonoscopies with an x-ray system within a pill.
EL SEGUNDO, Calif. — December 2016 — Efficient Power Conversion (EPC) will be hosting a hospitality suite in the Mandalay Bay hotel at the Consumer Electronics Show (CES) in Las Vegas, January 5th through the 8th.
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Wireless charging systems resulting from the WiTricity, ASD, and EPC collaboration will be on display at the Consumer Electronics Show (CES) 2017, January 5th – 8th, 2017 in Las Vegas, Nevada.
EL SEGUNDO, Calif. - Efficient Power Conversion Corporation (EPC) announces accelerated efforts to build magnetic resonance based wireless charging systems based on WiTricity’s reference designs that feature gallium nitride (GaN)-based solutions with ASD Technology Limited (ASD). This ramp-up in activity is in response to recently rising customer and end-system manufacturer interests in wireless charging products using gallium nitride technology.
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On November 3rd, IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the design and PCB manufacturing methods for using chip-scale packaged GaN power devices.
EL SEGUNDO, Calif.— October 2016 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT).
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The superior characteristics of eGaN ® FETs and ICs enable a lower cost single transmit amplifier solution that can wirelessly charge devices regardless of the standard used in the receiving device.
EL SEGUNDO, Calif — September 2016 — Efficient Power Conversion Corporation’s (EPC) EPC9121 multi-mode wireless charging demonstration system has been honored with an Electronic Products China’s “Top 10 Power Product – Breakthrough Technology Award.” The award is a benchmark for recognizing a significant advancement in a technology or its application that leads the industry trend. The award presentation was announced on September 8th, 2016 in Beijing, China during its Power Conference.
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EPC Phase Eight Reliability Report documents a combined total of over 8 million GaN device-hours with zero failures. The report examines, in detail, the stress tests that EPC devices are subjected to prior to release as qualified products and analyzes the physics of failure.
EL SEGUNDO, Calif.— July 2016 — EPC announces its Phase Eight Reliability Report showing the results of the rigorous set of JEDEC-based qualification stress tests eGaN FETS and integrated circuits undertake prior to being considered qualified products.
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Ismosys now represents EPC’s European sales, marketing, and technical support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems using gallium nitride
EL SEGUNDO, Calif.—July 2016 — To support its accelerating growth throughout Europe, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Ismosys as its sales, marketing, and technical support representative. Ismosys, founded in 1994, provides support to design houses, designers and engineers across Europe. This is achieved through 10 regional offices covering the entire EMEA and a significant centralized resource, fostering sales, driving marketing and enabling technical support.
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EPC’s new value-added partnership with ASD aims to support customer designs from conception to manufacturing of eGaN® technology-based wireless power charging and other emerging applications.
EL SEGUNDO, Calif.— July 2016 — Efficient Power Conversion Corporation (EPC), Los Angeles-based innovator in gallium nitride (eGaN) technology for replacing MOSFET technology, has joined forces with ASD Technology Limited (ASD), a Hong-Kong-based company delivering best-in-class customer solutions for applications using the latest eGaN technology.
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The superior characteristics of eGaN® FETs and ICs enable a lower cost single transmit amplifier solution that can wirelessly charge devices regardless of the standard used in the receiving device.
EL SEGUNDO, Calif. — June 2016 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete demonstration multi-mode wireless power charging kit, the EPC9121. The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs and ICs for highly efficient multi-mode wireless power charging systems that can cut across any standard used in the receiving units.
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