One of the oldest challenges of power electronics is the paralleling of multiple transistors to obtain a higher-current switch. This task is rarely straightforward, as two or more transistors never exhibit perfectly identical electrical parameters, preventing an even distribution of current.

For early designers of power converters, the feat was even more arduous because available components were current-driven bipolar junction transistors (BJTs). This means that no intrinsic stabilizing effect can be leveraged to help attain an even current sharing.  In fact, the required base-to-emitter voltage (V_BE) decreases as temperature increases (-2 mV/°C)—under normal operation—so even a small imbalance causes the transistor with lower V_BE to conduct more current and heat up further, leading to failures.

Power Electronics News
March 2026

Read article

In this video, you will find a conversation with Alex Lidow - the inventor of the original Power MOSFET and HEXFET during his time at International Rectifier. Alex later became CEO of the company founded by his father and today is the Founder and CEO of Efficient Power Conversion (EPC), known for producing some of the most efficient GaN FETs on the market. In the discussion, you will hear the story of how the power MOSFET was invented - on Alex’s very first day on the job - and how that breakthrough helped shape modern power electronics.

The conversation also dives into silicon physics, the rise of GaN technologies, and the growing power demands of AI data centers and humanoid robots, offering a fascinating perspective that connects the origins of power semiconductors with the technologies driving the future of computing and electrification.

Watch Full Interview

This paper examines the impact of parasitic capacitances on the dynamic current sharing behaviour of Gallium Nitride (GaN) field-effect transistors (FETs) operating in parallel configurations. As GaN technology continues to gain prominence in high-performance power electronic systems, paralleling multiple devices has become a common strategy to increase current-handling capability.

Salvatore Musumeci PhD, Vincenzo Barba PhD, Michele Pastorelli Professor, Marco Palma MSc

ScienceDirect
Read article

Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept of “AI factories” has emerged, reframing data centers as productivity-driven systems optimized for high compute density.

Bodo’s Power Systems
March 2026
Read Article by Alejandro Pozo and Michael De Rooij

The EPC33110 is a three-phase module that utilizes gallium nitride (GaN) monolithic integrated circuits, enabling the development of smaller, lighter motor drive inverters. Its compact design is ideal for drone and humanoid robot applications, supporting higher switching frequencies with respect to traditional silicon-based inverters, ultimately improving system size, weight, and performance.

Bodo’s Power Systems
December 2025
Read article

With the advent of next-generation GaN transistors operating in the 40 V to 15 V range, R_DS(on) specifications have reached the re¬markable level of hundreds of micro-ohms , significantly outperforming comparably-sized power MOSFETs. To fully capitalize on the advantages of these ultra-low resistance FETs, careful PCB layout is essential to prevent any additional re¬sistance that could undermine their performance. This article will examine various layout strategies for GaN FETs, analyzing how dif¬ferent PCB configurations affect added resistance for each design.

Bodo’s Power Systems
October 2025
Read article

The final installment of our three-part series explores the isolated DC-DC stage in server power supplies. The design features four LLC modules in an input-series, output-parallel (ISOP) configuration, capable of processing up to 5.5 kW between a 400 VDC bus and a 50 VDC output. This fixed-ratio converter delivers galvanic isolation and high performance for advanced server power architectures.

Bodo’s Power Systems
September 2025
Read article

In an interview with Power Electronics News, Marco Palma, director of motor drive systems and applications at EPC, noted that the EPC91118 supports up to 15 Arms per phase for three-phase BLDC motors from a 15-V to 55-V DC input. Remarkably, the complete power stage, sensing, control, and communication features are all integrated into a 32-mm diameter board, setting a new benchmark for miniaturization in motor control.

Power Electronics News
July 2025
Read article

GaN FETs are revolutionizing power electronics - faster, smaller, and CHEAPER than silicon MOSFETs. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains why GaN technology is now powering AI servers, satellites, and robotics. Learn how wide band gap semiconductors achieve 10x better performance than silicon, why GaN is actually less expensive at 100-200V, and how the new Gen 7 devices are 3x smaller than previous generations.

View Video

GaN (Gallium Nitride) FETs are revolutionizing power electronics with superior reliability compared to traditional silicon semiconductors. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains the fundamental advantages of GaN technology for power conversion applications. Learn why GaN devices can operate at 300°C while silicon fails, understand the absence of the Spirito effect in GaN FETs, and discover how these wide bandgap semiconductors achieve radiation immunity for space applications.

View Video

As GaN (gallium nitride) technology continues to mature, its applications are expanding into lower voltage domains—traditionally dominated by silicon MOSFETs. In this insightful article, discover how GaN’s superior efficiency, reduced switching losses, and compact form factor are transforming power conversion in consumer electronics, automotive systems, and edge computing and ushering in a new era of innovation in low voltage power design.

Components in Electronics
June 2025
Read article

In this op-ed, Alfred Vollmer explores the accelerating shift from traditional silicon MOSFETs to wide bandgap (WBG) semiconductors—particularly gallium nitride (GaN) and silicon carbide (SiC). GaN devices are conquering more and more terrain that was formerly a pure domain of Silicon MOSFETs.

Bodo’s Power Systems
June 2025
Read article

Modern power systems demand higher efficiency, increased power density, and reduced electromagnetic interference (EMI)—all while adhering to shrinking size constraints. Among the converter topologies addressing these challenges, the Flying Capacitor Multilevel (FCML) converter stands out for its unique advantages. When combined with Gallium Nitride (GaN) power transistors, FCML converters offer an unprecedented level of performance, particularly in the realm of medium-voltage applications such as 48 V data center power delivery, battery management systems, and high-efficiency power factor correction (PFC) circuits.

Power Systems Design
June 2025
Read article

In part one of this series, we gave a brief introduction to the multi-level totem-pole PFC topology and how it can improve power density in server applications. In this second part we dive deeper into the design details of such a solution and present experimental results for a 240 VAC input to 400 VDC output, 5 kW PFC system.

Bodo’s Power Systems
May 2025
Read article

The next-generation GaN platform is driving a significant leap in high-density DC-DC converter technology, offering unprecedented performance improvements over traditional silicon-based solutions. In this presentation, Alex Lidow explores the evolution of 100 V and 40 V GaN devices, showcasing their role in 48V-to-12V power conversion. This session highlights how GaN technology is revolutionizing power conversion, providing the foundation for smaller, more efficient, and lower-cost solutions in high-performance applications.

PCIM Technology Stage
View Video

This article explores the value of high-frequency motor drives, their advantages and the capabilities of GaN technology, which make them suitable for today’s demanding applications.

Electronics Weekly
May, 2025
Read article

This month’s How2Power newsletter covers EPC’s participation at APEC 2025. At the show, EPC showcased a life-sized server display and cutting-edge GaN-based power converters, including a 48 V to 12 V LLC reference design delivering over 95.5% efficiency and >5 kW/in³ power density. CEO Alex Lidow also revealed a compact 5 kW AC-DC power supply that exceeds 100 W/in³, highlighting GaN’s impact on server power architectures. On the robotics front, EPC’s humanoid ambassador “Greg” and a miniaturized GaN inverter for motor joints illustrated why GaN is quickly becoming essential in the world of intelligent machines.

How2Power
April, 2025
Read more

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

At electronica 2024, on the DigiKey booth, Caitlin Gittins spoke with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. After introducing EPC and explaining the unique benefits of GaN compared to traditional silicon-based semiconductors, the conversation explores EPC’s specific GaN solutions and their applications in robotics. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future. It examines how GaN is advancing the robotics industry by enhancing autonomy and efficiency and discuss EPC’s recommendations for developers adopting GaN in their designs. The conversation concludes with how EPC is positioning itself to meet the evolving demands of robotics and AI-driven humanoid robots.

Electronic Specifier
November, 2024
Watch interview

The adoption of photovoltaic (PV) systems continues to grow, and the ever-present pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost without compromising reliability. As renewable energy systems continue to evolve, the use of innovative technologies like GaN FETs will be key to driving further improvements in cost, performance, and reliability across the industry.

Bodo’s Power Systems
November 2024
Read article