By Marco Palma, Director, Motor Drives Systems and Applications, and Maurizio Di Paolo Emilio, Marcom Director, Efficient Power Conversion (EPC)

Gallium nitride (GaN) power devices are enabling a new generation of high-efficiency, high-power-density motor drive systems. Compared with conventional silicon MOSFETs, GaN transistors offer significantly lower gate charge, reduced output capacitance, and very low on-resistance, allowing power converters to operate at much higher switching speeds. As a result, motor inverters based on GaN technology can achieve switching frequencies well above 100 kHz while reducing both conduction and switching losses. These characteristics enable smaller passive components, improved efficiency, and more compact system designs.

Bodo’s Power Systems – May Issue

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In this exclusive video interview with Electronic Product Design & Test (EPDT), Dr. Alex Lidow, CEO and co-founder of EPC, discusses how GaN technology is transforming the power electronics landscape.

He highlights the explosive growth of AI servers, robotics, and space applications, where GaN’s superior efficiency, power density, and compact size are enabling entirely new system architectures. Dr. Lidow also shares his perspective on EPC’s strategic focus on high-performance markets, the company’s fabless innovation model, and the ongoing shift toward integrated GaN ICs that will define the next decade of power conversion.

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El Segundo, CA – March 2025 – EPC is pleased to announce that the United States Patent Office, in a decision issued in IPR2023-01381, has strengthened the ’294 patent by adding two new patent claims that are fundamental to commercial enhancement-mode GaN devices. While the USPTO also cancelled two claims that were the basis for the ITC’s infringement decision against Innoscience, EPC will appeal the USPTO’s cancellation of its claims. Historically, EPC’s patents have been upheld in multiple jurisdictions, including both the U.S. and China, reinforcing EPC’s expectation that the final outcome will ultimately be in its favor.

El Segundo, CA — March 2025 – Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, introduces the EPC2367, a next-generation 100 V eGaN® FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of applications.

EL SEGUNDO, Calif. — February 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, is set to highlight cutting-edge advancements in AI, robotics, and other high-density power conversion applications at the Applied Power Electronics Conference (APEC) 2025. During the event, held from March 16 to March 20 in Atlanta, GA, EPC will focus on demonstrating how GaN is revolutionizing AI infrastructure, humanoid robotics, industrial and consumer applications in booth 1231.

EL SEGUNDO, Calif.— February 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices is pleased to announce the release of the 4th edition of its groundbreaking textbook, GaN Power Devices for Efficient Power Conversion.

This latest edition reflects the rapid advancements in GaN technology and its transformative impact across various industries, including renewable energy, electric vehicles, data centers, robotics, and space applications. Co-authored by EPC CEO Dr. Alex Lidow and a team of GaN experts, the textbook remains an indispensable resource for engineers, students, and industry innovators looking to stay at the forefront of power electronics.

The EPC91104 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices announces the launch of the EPC91104, a high-performance 3-phase BLDC motor drive inverter reference design. This innovative design is ideal for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements.

The EPC91200 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices introduces the EPC91200, a fully configured motor drive inverter reference design that delivers exceptional performance and flexibility for a variety of industrial and battery-powered applications.

ITC import and sales ban on Innoscience products now in effect

El Segundo, CA – January 7, 2025 – Efficient Power Conversion (EPC) today announced the conclusion of the Presidential review period for the U.S. International Trade Commission’s (ITC) final determination, affirming that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) infringed EPC’s foundational patent for GaN technology. The ITC’s decision is now final, implementing an import and sales ban on Innoscience products in the United States without a license from EPC.

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

The world is entering a new era of automation, where robots are becoming increasingly sophisticated, capable of performing tasks once considered the exclusive domain of humans. At the forefront of this transformation are humanoid robots, designed to mimic the form and functions of the human body.

Bodo’s Power Systems
October 2024
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EPC’s GaN Experts will be available during PCIM Asia, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications including AI servers, robotics, and more.

EL SEGUNDO, Calif. — August 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is excited to announce its participation in PCIM Asia 2024. The event will take place from August 28-30 in Shenzhen, China. Attendees are invited to visti EPC at Hall 11, Stand F01 to explore the industry’s most comprehensive portfolio of GaN power conversion solutions.

Agency’s Recommendation Validates EPC’s Proprietary GaN Technology Core to Powering Rapid Development of AI, Satellites, Humanoid Robots and Autonomous Driving

El Segundo, CA – July 8, 2024 – Efficient Power Conversion (EPC), a rapidly growing and innovative company, announced today that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

Bodo’s Power Systems
May, 2024
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EPC introduces the 50 V, 8.5 mOhm EPC2057 GaN FET in tiny 1.5 mm x 1.2 mm footprint, offering higher power density for USB-C PD applications.

EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

El Segundo, CA – May 6, 2024 – Efficient Power Conversion Corp (“EPC”) announced today that the China National Intellectual Property Administration (“CNIPA”) has validated the claims of EPC patent titled “Compensated gate MISFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”). 

根据国家知识产权局官网20204年4月2日的消息，宜普电源转换公司（Efficient Power Conversion Corporation, EPC，以下简称宜普公司）一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序（案件编号：4W116775）中被维持有效。该件专利的无效请求人是英诺赛科（苏州）科技有限公司（以下简称英诺赛科公司）。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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