News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates.

The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!

April, 2023
View video

Read more

How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.

Digi-Key Electronics
April, 2023
Read article

Read more

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

Read more

Projected GaN Device Lifetime in Real World Applications Presented in EPC’s Phase 15 Report on GaN Reliability

Projected GaN Device Lifetime in Real World Applications Presented in EPC’s Phase 15 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-15 Reliability Report adding to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2023 — EPC announces the publication of its Phase-15 Reliability Report, documenting continued work using test-to-fail methodology and adding specific reliability metrics and predictions for real world applications including solar optimizers, lidar sensors, and DC-DC converters.

Read more

ePower Stage ICs Boost Power Density and Simplify Design Across Power Budgets

ePower Stage ICs Boost Power Density and Simplify Design Across Power Budgets

Efficient Power Conversion (EPC) expands its family of footprint compatible ePower™ Stage ICs to boost power density and simplify design for different power requirements in DC-DC applications, motor drives, and class-d audio amplifiers.

EL SEGUNDO, Calif.— March 2023 — EPC announces the introduction of two new 100 V power stage ICs rated at 15 A (EPC23104) and 25 A (EPC23103). The two devices join the 100 V 35 A power stage IC EPC23102 offered by EPC.

Read more

Power Steering with GaN ePower™ ICs

Power Steering with GaN ePower™ ICs

With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
Read article

Read more

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

Read more

Power Packaging for the GaN Generation of Power Conversion

Power Packaging for the GaN Generation of Power Conversion

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
Read article

Read more

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
Read article Read more

Meet with the EPC GaN Experts at APEC 2023 to See how the Latest Generation Power Semiconductors are Providing Best-in-Class Power Density Across Multiple Industries

Meet with the EPC GaN Experts at APEC 2023 to See how the Latest Generation Power Semiconductors are Providing Best-in-Class Power Density Across Multiple Industries

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — March 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations at the premier power electronics conference; the IEEE Applied Power Electronics Conference and Exposition (APEC 2023) in Orlando from March 19th through the 23rd (see detailed schedule below).  In addition, the company will demonstrate it’s latest generation of eGaN® FETs and ICs in applications ranging from high-power density computing, eMobility, robotics, solar power, battery charging, and more in booth # 732 in the Orange County Convention Center.  Stop by to see the ‘Wall of GaN’ – the broadest portfolio of GaN power semiconductors in the market available for off-the-shelf delivery.

Read more

USB PD 3.1 High Power Density and Low-Profile Solutions using EPC GaN Integrated Power Stage

USB PD 3.1 High Power Density and Low-Profile Solutions using EPC GaN Integrated Power Stage

EPC introduces the EPC9177, an eGaN® IC-based reference design for high power density, low profile DC-DC converters to address new USB PD 3.1 stringent demands for multiport chargers and on-motherboard DC-DC converting 28 V – 48 V input to 12 V or 20 V output.

EL SEGUNDO, Calif.—  February, 2023 — EPC announces the availability of the EPC9177, a digitally-controlled, single-output synchronous buck converter reference design board operating at 720 kHz switching frequency converting an input voltage of 48 V, 36 V, 28 V to a regulated 12 V output voltage and delivering up to 20 A continuous output current.

Read more

EPC Presents Sixth eGaN Generation

EPC Presents Sixth eGaN Generation

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
Watch Video

Read more

200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

Read more

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

Read more

Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Efficient Power Conversion (EPC) introduces EPC21701, an 80 V laser driver IC capable of 15 A pulsed current for time-of-flight (ToF) lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing. 

EL SEGUNDO, Calif.— January 2023 — EPC announces the introduction of the EPC21701, a laser driver that monolithically integrates an 80 V, 40 A FET with gate driver and 3.3 logic level input into a single chip for time-of-flight lidar systems used in robotics, surveillance systems, and vacuum cleaners. It is tailored to lidar systems for gesture recognition, time of flight (ToF) measurement, robotic vision, or industrial safety.

Read more

Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs

EL SEGUNDO, Calif.—  January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications.  The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.

Read more
RSS
135678910Last