EPC91120 Reference Design Combines Power, Sensing, and Control in an Ultra-Compact Format for Robot Joints and UAVs.

EL SEGUNDO, Calif.— November 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announces the launch of the EPC91120, a high-performance 3-phase brushless DC (BLDC) motor drive inverter optimized for humanoid robot joints. Featuring EPC’s EPC23102 ePower™ Stage IC, the EPC91120 delivers superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter footprint designed to integrate directly within robotic motor assemblies.

Modular 5 kW GaN Design from EPC Powers AI Servers and OCP ORv3 Racks

EL SEGUNDO, Calif.— October 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announced the availability of a high-efficiency, high-power-density 5 kW AC-to-48 V DC reference design that demonstrates the full potential of gallium nitride (GaN) technology for next-generation server and AI power architectures.

The complete system—comprising the EPC91107KIT 4-Level Totem-Pole PFC and the EPC91110KIT Input-Series Output-Parallel (ISOP) LLC Converter—achieves up to 96.5% system efficiency and a combined power density of 116 W/in³. Designed to meet Open Rack V3 (OCP ORv3) size requirements, this modular solution delivers superior performance with dramatically smaller size and lower cost compared to equivalent silicon implementations.

At the recent PCIM Asia exhibition, EETimes China interviewed Alex Lidow, CEO of EPC, who showed the GaN products and technologies that will be used in high-density servers and humanoid robotics.

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EL SEGUNDO, Calif. — October 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, develops innovative power converter to accelerate the adoption of 800 V_DC distribution systems for the next generation of AI data centers.

Future AI factory data centers will require megawatt-scale rack power delivery systems. To address this challenge, EPC has developed a low-cost, low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology.

In this exclusive video interview with Electronic Product Design & Test (EPDT), Dr. Alex Lidow, CEO and co-founder of EPC, discusses how GaN technology is transforming the power electronics landscape.

He highlights the explosive growth of AI servers, robotics, and space applications, where GaN’s superior efficiency, power density, and compact size are enabling entirely new system architectures. Dr. Lidow also shares his perspective on EPC’s strategic focus on high-performance markets, the company’s fabless innovation model, and the ongoing shift toward integrated GaN ICs that will define the next decade of power conversion.

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With the advent of next-generation GaN transistors operating in the 40 V to 15 V range, R_DS(on) specifications have reached the re¬markable level of hundreds of micro-ohms , significantly outperforming comparably-sized power MOSFETs. To fully capitalize on the advantages of these ultra-low resistance FETs, careful PCB layout is essential to prevent any additional re¬sistance that could undermine their performance. This article will examine various layout strategies for GaN FETs, analyzing how dif¬ferent PCB configurations affect added resistance for each design.

Bodo’s Power Systems
October 2025
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The final installment of our three-part series explores the isolated DC-DC stage in server power supplies. The design features four LLC modules in an input-series, output-parallel (ISOP) configuration, capable of processing up to 5.5 kW between a 400 VDC bus and a 50 VDC output. This fixed-ratio converter delivers galvanic isolation and high performance for advanced server power architectures.

Bodo’s Power Systems
September 2025
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EL SEGUNDO, Calif. — September 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, is pleased to confirm its participation at PCIM Asia 2025 in Shanghai, China, taking place September 24–26. Visitors are invited to visit EPC at Hall N5, Stand E12, where they can explore the industry’s most comprehensive GaN portfolio and engage with the company’s technical experts

Explore the Future with GaN

El Segundo, CA – August 2025 – Efficient Power Conversion Corporation (EPC) today announced that the Beijing IP Court has denied the appeal filed by Innoscience (Suzhou) Technology Co., Ltd. (Innoscience), thereby reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, titled “Compensated gate MISFET and method for fabricating the same” (the Compensated Gate Patent). This latest decision by the Beijing IP Court further strengthens EPC’s valuable intellectual property portfolio and reinforces its position as a pioneer in enhancement-mode GaN semiconductor devices.

Two of EPC’s patents covering enhancement-mode GaN field effect transistors (FETs) and their fabrication had been challenged by Innoscience (Suzhou) in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the Compensated Gate Patent in (case number: (2024）京73 行初15061 号 ((2004) Jing73XingChu NO.15061)).

In an interview with Power Electronics News, Marco Palma, director of motor drive systems and applications at EPC, noted that the EPC91118 supports up to 15 Arms per phase for three-phase BLDC motors from a 15-V to 55-V DC input. Remarkably, the complete power stage, sensing, control, and communication features are all integrated into a 32-mm diameter board, setting a new benchmark for miniaturization in motor control.

Power Electronics News
July 2025
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Andover, MA – July 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the EPC7C021, a high-performance, three-phase motor demonstration board featuring the radiation-hardened EPC7011L7C eGaN^® IC. Designed for ease of evaluation and system integration, the EPC7C021 delivers a user friendly, flexible platform for developing motor drive applications such as reaction and momentum wheels, ion thrusters, robotics and other automation in demanding radiation environments.

Measuring just 6.50” x 5.22”, the EPC7C021 is a full-featured evaluation board that can operate as a stand-alone three-phase motor driver or be paired with the EPC9147A controller daughtercard for closed-loop motor control. The board includes dead-time generation circuitry, current and voltage monitoring, and optional filtering for sine wave approximation—making it ideal for engineers looking to evaluate GaN performance in space- and radiation-critical applications.

GaN FETs are revolutionizing power electronics - faster, smaller, and CHEAPER than silicon MOSFETs. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains why GaN technology is now powering AI servers, satellites, and robotics. Learn how wide band gap semiconductors achieve 10x better performance than silicon, why GaN is actually less expensive at 100-200V, and how the new Gen 7 devices are 3x smaller than previous generations.

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GaN (Gallium Nitride) FETs are revolutionizing power electronics with superior reliability compared to traditional silicon semiconductors. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains the fundamental advantages of GaN technology for power conversion applications. Learn why GaN devices can operate at 300°C while silicon fails, understand the absence of the Spirito effect in GaN FETs, and discover how these wide bandgap semiconductors achieve radiation immunity for space applications.

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EPC91118 Reference Design Combines Power, Sensing, and Control in an Ultra-Compact Format for Robot Joints and UAVs.

EL SEGUNDO, Calif.— July 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices introduces the EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A_RMS per phase from a 15 V to 55 V DC input in an ultra-compact circular form factor.

As GaN (gallium nitride) technology continues to mature, its applications are expanding into lower voltage domains—traditionally dominated by silicon MOSFETs. In this insightful article, discover how GaN’s superior efficiency, reduced switching losses, and compact form factor are transforming power conversion in consumer electronics, automotive systems, and edge computing and ushering in a new era of innovation in low voltage power design.

Components in Electronics
June 2025
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In this op-ed, Alfred Vollmer explores the accelerating shift from traditional silicon MOSFETs to wide bandgap (WBG) semiconductors—particularly gallium nitride (GaN) and silicon carbide (SiC). GaN devices are conquering more and more terrain that was formerly a pure domain of Silicon MOSFETs.

Bodo’s Power Systems
June 2025
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Andover, MA – June 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.

As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.

Compact 180 W GaN buck converter with no heatsink needed—ideal for USB PD, laptops, and portable power applications.

EL SEGUNDO, Calif.— June 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announces the release of the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems.

Modern power systems demand higher efficiency, increased power density, and reduced electromagnetic interference (EMI)—all while adhering to shrinking size constraints. Among the converter topologies addressing these challenges, the Flying Capacitor Multilevel (FCML) converter stands out for its unique advantages. When combined with Gallium Nitride (GaN) power transistors, FCML converters offer an unprecedented level of performance, particularly in the realm of medium-voltage applications such as 48 V data center power delivery, battery management systems, and high-efficiency power factor correction (PFC) circuits.

Power Systems Design
June 2025
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The EPC9196 is a 25 A_RMS, 3-Phase BLDC Motor Drive Inverter optimized for 96–150 V Battery Applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices announces the release of the EPC9196, a high-performance 25 A_RMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics.