Efficient Power Conversion (EPC) publishes Phase-14 Reliability Report, which adds to the extensive knowledge and demonstrates a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— February 2022 — EPC announces its Phase-14 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. The rapid adoption of GaN devices in many diverse applications calls for the continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. The Phase-14 Reliability Report presents the strategy used to measure and predict lifetime based upon tests that force devices to fail under various conditions. This information can be used to create more robust and and higher performance products for applications such as lidar for autonomous cars, robotics, security, and drones, high power density computing, and satellites, to name just a few.

The EPC9170 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— January 2022 — EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN^® IC plus EPC2302 eGaN^® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

Efficient Power Conversion (EPC) provides engineers with a growing array of design tools, models, and performance simulations for high performance GaN-based designs.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the debut of the GaN Power Bench™, a suite of design tools to assist engineers in getting the optimal performance from their GaN-based designs. eGaN^® FETs and ICs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of today’s leading-edge applications. The tools in the GaN Power Bench assist designers in the selection of the best GaN device for the application, simulate and optimize the thermal performance of the design, and provide application examples with all the supporting documentation needed to quickly and easily replicate the optimal design tips necessary for ideal performance.

The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the availability of the EPC9166, a 500 W DC-DC demo board that converts a 12 V input to 48 V output. The EPC9166 demo board demonstrates the Renesas ISL81807 80 V two-phase synchronous boost controller with the latest generation EPC2218 eGaN FETs from EPC to achieve greater than 96.5% efficiency in a 12 V input to 48 V regulated output conversion with 500 kHz switching frequency.  The output voltage can be configured to 36 V, 48 V, and 60 V. The board can deliver 480 W power without a heatsink.

Efficient Power Conversion (EPC) introduces the ePower Chipset family that integrates 100 V GaN driver and FETs up to 65 A offering higher performance and smaller solution size for high power density applications including DC-DC conversion and motor drives.

EL SEGUNDO, Calif.— December 2021 — EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum R_DS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm² footprint.

The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN^® FET

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to achieve 6 kW. The board features eight EPC2218 100 V eGaN^® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN^® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

A 50 W, 12 V to 60 V eGaN^® FET-based synchronous boost converter achieves 95.3% peak efficiency with low temperature rise with a simple, low-cost topology.

EL SEGUNDO, Calif.— October, 2021 — EPC announces the availability of the EPC9162, a bi-directional buck or reverse-boost converter.  This demonstration board features the 100 V EPC2052 for the synchronous converter, and the EPC2038 in the synchronous bootstrap FET circuit. 

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.

The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

These new generation eGaN^® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight.

EL SEGUNDO, Calif.— June, 2021 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN^® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

The EPC9137 is a two-phase 48 V – 12 V bidirectional converter that delivers 1.5 kW with 97% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9137, a 1.5 kW, two-phase 48 V – 12 V bidirectional converter that operates with 97 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN^® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high performance, low-cost BLDC motors as demonstrated in the EPC9146 demonstration board.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9146, a 400 W motor drive demonstration. The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower™ Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 A_RMS) maximum output current. The inverter board measures just 81 mm x 75 mm and achieve an efficiency of greater than 98.4% at 400 W output power.

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN^® technology.