Efficient Power Conversion (EPC) introduces the 150 V, 6 mΩ EPC2308 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— October 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150 V EPC2308 designed for motor drive in power tools and robots, high density DC-DC from/to 80 V-100 V for industrial applications, synchronous rectification to 28 V – 54 V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.

The EPC9176 GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— October, 2022 — EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower™ Stage GaN IC with embedded gate driver function and two GaN FETs with 5.2 mΩ typical R_DS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk (20 A_RMS). This voltage range and power level makes the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36 V – 80 V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots and factory automation.

New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

Efficient Power Conversion (EPC) introduces the 100 V, 3.8 mΩ EPC2306 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio.

EL SEGUNDO, Calif.— September 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio.

The 100 V EPC2218 GaN FETs alleviate space limitations to achieve higher frequency and power rating in BRC’s new M500/14 power optimizer

EL SEGUNDO, Calif.— August 2022.  BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems. Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses.

Efficient Power Conversion (EPC) introduces the latest ePower™ Stage IC that integrates a complete GaN half-bridge power stage capable of up to 35 A at 1 MHz operation offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drives, and class-d audio amplifiers.

EL SEGUNDO, Calif.— August 2022 — EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.  

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with the addition of a fifth rad hard device to the product family.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A_Pulsed, rad-hard GaN FET in a small 6.56 mm² footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, EPC7018, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 A_Pulsed, rad-hard GaN FET in a small 13.9 mm² footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology.

EL SEGUNDO, Calif.—  June, 2022 — EPC announces the debut of a user community, the “GaN Talk Support Forum” as an environment for engineers to access product and design support and share ideas on the use of gallium nitride (GaN) based power technology. The forum was developed for engineers, engineering students, and all GaN enthusiasts and provides an opportunity for users to submit GaN-related questions and share ideas with the user community. Questions can be searched by topic category, top topics, or latest posts. Beyond submitting questions, users can share past questions and answers from within the forum via a ‘share’ link in the post.

The EPC9173 GaN-based inverter reference design enhances motor system size, performance, range, precision, torque, all while simplifying design for faster time-to-market. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— June, 2022 — EPC announces the availability of the EPC9173, a 3-phase BLDC motor drive inverter using the EPC23101 eGaN^® IC with embedded gate driver function and a floating power GaN FET with 3.3 mΩ R_DS(on). The EPC9173 operates from an input supply voltage between 20 V and 85 V and can deliver up to 50 Apk (35 A_RMS). This voltage range and power level makes the solution ideal for a variety of motor drive applications including e-bikes, scooters, city cars, drones, and robotics.

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN^® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 A_Pulsed, rad-hard GaN FET in a small 5.76 mm² footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN^® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R_DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current. 

EL SEGUNDO, Calif.— March, 2022 — EPC announces the availability of the EPC9171, a 90 V – 260 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48 V output voltage and 5 A load

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 A_Pulsed, rad-hard eGaN FET in a small 13.9 mm² footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

EPC and Analog Devices introduce reference design using a new Analog controller fully optimized to drive EPC GaN FETs. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables up to 2 MHz switching frequency for high power density and low-cost DC-DC Conversion.

EL SEGUNDO, Calif.—  March, 2022 — EPC announces the availability of the EPC9160, a dual output synchronous buck converter reference design board operating at 2 MHz switching frequency that converts an input voltage of 9 V to 24 V to a 3.3 V or 5 V output voltage and delivers up to 15 A continuous current for both outputs. Thanks to the high switching frequency the converter size is very small, only 23 mm x 22 mm for both outputs, and the inductor height is only 3 mm.