By Maurizio Di Paolo Emilio, Marcom Director, EPC – Efficient Power Conversion

The design requirements for motor drive electronics are being significantly altered by the continuous shift from conventional automation to mobile robotics. Volume, mass, efficiency, acoustic emission, and dynamic response are all simultaneously constrained by actuators integrated into wearable technology, humanoid robots, and aerial platforms. In these applications, the inverter becomes a tightly coupled component of the electromechanical structure rather than a peripheral power stage.

50 A_RMS three-phase inverter platform built around the Gen-7 EPC2366 eGaN® power transistor, showcased at EPC’s booth at APEC

SAN ANTONIO, Texas - March 23, 2026 - At APEC 2026, Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN®) power devices, is introducing the EPC91121 motor drive inverter evaluation board, built around the Gen-7 EPC2366 40 V eGaN® power transistor and showcasing the platform at the company’s booth (#1935).

Integrated GaN power stage with onboard control, sensing, and communication, delivering up to 20 A_RMS in a 32 mm circular design for space-constrained robotic applications.

EL SEGUNDO, Calif. – February 23, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced the release of the EPC91122, a high-performance 3-phase BLDC motor drive inverter evaluation board specifically engineered for humanoid robot joint applications. Featuring EPC’s highly integrated EPC33110 3-phase ePower™ Stage module, the EPC91122 delivers up to 20 A_RMS (28 A_peak) phase current in an ultra-compact form factor optimized for space-constrained robotic joints, integrating all key functions of a complete motor drive inverter, including a microcontroller, motor shaft angular sensor, housekeeping power supplies, accurate voltage and current sense.

In an interview with Power Electronics News, Marco Palma, director of motor drive systems and applications at EPC, noted that the EPC91118 supports up to 15 Arms per phase for three-phase BLDC motors from a 15-V to 55-V DC input. Remarkably, the complete power stage, sensing, control, and communication features are all integrated into a 32-mm diameter board, setting a new benchmark for miniaturization in motor control.

Power Electronics News
July 2025
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EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of applications.

EL SEGUNDO, Calif. — February 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, is set to highlight cutting-edge advancements in AI, robotics, and other high-density power conversion applications at the Applied Power Electronics Conference (APEC) 2025. During the event, held from March 16 to March 20 in Atlanta, GA, EPC will focus on demonstrating how GaN is revolutionizing AI infrastructure, humanoid robotics, industrial and consumer applications in booth 1231.

The EPC91200 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices introduces the EPC91200, a fully configured motor drive inverter reference design that delivers exceptional performance and flexibility for a variety of industrial and battery-powered applications.

The EPC9193 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost.

EL SEGUNDO, Calif.— March, 2024 — EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN^® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:

EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm x 5 mm QFN package, offering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.

EL SEGUNDO, Calif.— February 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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The EPC9194 GaN-based inverter reference design significantly enhances motor drive system efficiency, range, and torque, while more than doubling power per weight. The inverter’s extremely compact size allows seamless integration into the motor housing resulting in the lowest electromagnetic interference (EMI,) highest density, and lowest weight.

EL SEGUNDO, Calif.— October, 2023 — EPC announces the availability of the EPC9194, a

Battery-powered industrial vehicles such as forklifts, manual handlers, or warehouse automatic vehicles require high-current inverters to drive the electric motors. Gallium nitride technology helps to increase the power capability and simplify the inverter design in these applications.

Bodo’s Power Systems
October, 2023
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.

Power Electronics News
May, 2023
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The EPC9186 GaN-based inverter reference design enhances motor system performance, range, precision, and torque for high power applications.

EL SEGUNDO, Calif.— May, 2023 — EPC announces the availability of the EPC9186, a 3-phase BLDC motor drive inverter using the EPC2302 eGaN^® FET. The EPC9186 supports a wide input DC voltage ranging from 14 V to 80 V. The high-power capability of the EPC9186 supports applications such as electric scooters, small electric vehicles, agricultural machinery, forklifts, and high-power drones.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 A_Pulsed, rad-hard GaN FET in a small 12 mm² footprint. The EPC7003 is a 100 V, 30 mΩ, 42 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) expands its family of footprint compatible ePower™ Stage ICs to boost power density and simplify design for different power requirements in DC-DC applications, motor drives, and class-d audio amplifiers.

EL SEGUNDO, Calif.— March 2023 — EPC announces the introduction of two new 100 V power stage ICs rated at 15 A (EPC23104) and 25 A (EPC23103). The two devices join the 100 V 35 A power stage IC EPC23102 offered by EPC.

Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.