GaN Device Reliability

eGaN^® devices have been in volume production since March 2010 and have demonstrated very high reliability in both laboratory testing and high-volume customer applications. eGaN devices have a remarkable field reliability record.

EPC has undertaken extensive reliability testing to continue the understanding of the behavior of Gallium Nitride devices over a wide range of stress conditions.

The results of these reliability studies show that GaN is an extremely robust technology that continues to improve at a rapid pace.

EPC is committed to subjecting GaN devices to rigid reliability standards and sharing the results with the power conversion industry. We continue to add new documents to this knowledge base regularly.

GaN Reliability Webinar Series

Using Test-to-Fail Methodology to Accurately Predict Projected Lifetime of GaN FETs and ICs in Motor Drive Applications

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Using Test-to-Fail Methodology to Accurately Predict How eGaN^® Devices Can Last More Than 25 Years in Solar Applications

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Using Test-to-Fail Methodology to Accurately Predict Projected Lifetime of eGaN^® Devices in Common DC-DC Converter Topologies

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Using Test-to-Fail Methodology to Accurately Predict Projected Lifetime of GaN FETs and ICs in Space Applications

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The GaN Power Bench provides a growing array of design tools, models, and performance simulations to assist with your design process.

Have a question about GaN reliability? Refer to the Reliability FAQs or Ask a GaN Expert