0 V - 40 V
41 V - 100 V
101 V - 350 V
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Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.
View the Interactive Wall of GaN
For guidance on assembly techniques click here for more information.
Gallium nitride (GaN) transistors and integrated circuits (ICs) offer fundamental advantages over silicon. GaN-based solutions exceed the performance capabilities of silicon in speed, temperature, and power handling. These improvements offer greater efficiency, significantly reduced size and weight, reduced cost, and improved thermal performance.
For more information on EPC’s GaN technology, download our Technology Brief
For more information on using GaN devices, download the ebooks Basics of Using GaN in Power Applications and Design Tips for Using GaN in Power Applications
Need GaN Technology for Mission-Critical Space Systems? – Discover radiation-hardened GaN power solutions at EPC Space. Visit EPC Space.