Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) provide fundamental advantages over traditional silicon-based transistors. With exceptional high electron mobility, GaN HEMTs excel in speed, temperature tolerance, and power handling capabilities. These unique attributes lead to greater efficiency, a significant reduction in size and weight, cost-effectiveness, and enhanced thermal performance.
For more information on EPC’s GaN technology, download our Technology Brief
0 V - 40 V
41 V - 100 V
101 V - 350 V
Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.
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With exceptional dynamic on-state resistance and minimal capacitances, our GaN HEMT transistors are designed for high-speed switching applications. EPC's HEMTs operate with reduced dead times, offering higher efficiency. Experience the reliability of our HEMT transistors, with demonstrated robustness is both laboratory testing and high-volume customer applications. eGaN devices have a remarkable field reliability record.