What Is Gallium Nitride HEMT? A Comprehensive Guide and Product Selector

Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) provide fundamental advantages over traditional silicon-based transistors. With exceptional high electron mobility, GaN HEMTs excel in speed, temperature tolerance, and power handling capabilities. These unique attributes lead to greater efficiency, a significant reduction in size and weight, cost-effectiveness, and enhanced thermal performance.

For more information on EPC’s GaN technology, download our Technology Brief

For more information on using GaN devices, download the ebooks Basics of Using GaN in Power Applications and Design Tips for Using GaN in Power Applications

Product Selector Guide for Gallium Nitride (GaN) HEMTs

Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.

For guidance on assembly techniques click here for more information.

Why GaN HEMTs are the Future of Power Conversion

With exceptional dynamic on-state resistance and minimal capacitances, our GaN HEMT transistors are designed for high-speed switching applications. EPC's HEMTs operate with reduced dead times, offering higher efficiency. Experience the reliability of our HEMT transistors, with demonstrated robustness is both laboratory testing and high-volume customer applications. eGaN devices have a remarkable field reliability record.